Which world-famous inventor was called dumb at school? Detailed answer

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Which world-famous inventor was called dumb at school? Detailed answer

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Which world-famous inventor was called dumb at school?

Thomas Edison studied at a comprehensive school for only 3 months. He did not show success at all, and the teacher even called him a dumbass. After that, Edison's mother decided to homeschool Thomas.

Authors: Jimmy Wales, Larry Sanger

Random interesting fact from the Great Encyclopedia:

What writer suffered from paranoia, which later turned out to be justified?

In the last years of his life, Ernest Hemingway became depressed and irritable, assuring family and friends that FBI agents were following him everywhere. Several times the writer was treated in a psychiatric clinic, from where he also called friends, saying that bugs were placed in the ward, and their conversation was being tapped. Under the influence of the electric shock, he lost the ability to write and formulate his thoughts, as he could do before. Finally, on July 2, 1961, Hemingway shot himself with a gun in his home. A few decades later, an official inquiry was made to the FBI about the writer’s case, to which the answer came: surveillance and listening took place, including in that mental hospital, since the authorities seemed suspicious of his activity in Cuba.

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Wide-gap semiconductors for automobiles 27.09.2013

GaN Systems presented a paper on new wide-gap semiconductors and their role in automotive power electronics at the Electric & Hybrid Vehicle conference and exhibition, which was held in Michigan (USA) September 17-19.

Electric vehicle manufacturers slated to enter the market in 2018 predict that gallium nitride semiconductors will reach price parity with silicon devices by that time. This will make the technology attractive as a replacement for silicon in the power electronics of electric and hybrid vehicles.

"EVs and hybrids house a lot of power electronics - battery management, backup power, brakes, valve timing, cruise control, safety systems, instrumentation clusters. And all of these systems suffer from limitations imposed by silicon that doesn't switch fast enough or can't handle high temperatures," said Girvan Patterson, CEO of GaN Systems.

"A new generation of gallium nitride and silicon carbide semiconductors overcomes these challenges, and they are also lighter, smaller and easier to package. These new devices will lead to significant improvements in automotive power electronics and provide significant opportunities for the industry," Patterson said. .

Julian Styles, director of business development at GaN Systems, gave a presentation explaining the technological advantages of semiconductor materials, which he believes will lead to the replacement of traditional silicon in the power converters of a new generation of electric and hybrid vehicles. Stiles explained what he sees as the advantages of high-bandgap power semiconductors based on gallium nitride. Among them are greater efficiency, weight reduction and lower cost of power electronics for electric and hybrid vehicles.

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