Complimentary transistors KT529A and KT530A. Reference data

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Complimentary transistors KT529A and KT530A. Reference data

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Encyclopedia of radio electronics and electrical engineering / Reference materials

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A complementary pair of transistors KT529A (pn-p) and KT530A (npn) with a low saturation voltage is made using planar epitaxial technology. The devices are packaged in a KT-26 plastic case with rigid stamped tinned leads (Fig. 1).

Complementary transistors KT529A and KT530A

Weight of the device - no more than 0,3 g.

Transistors are designed to work in switching, pulse units of equipment for a wide range of applications.

Main characteristics atTacr.av = 25±10°C

Collector reverse current, μA, no more, at a collector-base voltage of 80 V ...... 1
Reverse emitter current, μA, no more, at a base-emitter voltage of 4V......1
Collector-emitter saturation voltage, V, not more, at a collector current of 300 mA and a base current of 10 mA......0,2
typical value......0,13
Static base current transfer coefficient, not less, at a collector-emitter voltage of 5 V and a collector current of 300 mA......180
typical value......250
Boundary voltage, V, not less, at emitter current 10 mA......40
typical value......45
Base current transfer coefficient module at high frequency, not less than, at collector-emitter voltage of 5 V, emitter current of 300 mA and frequency of 100 MHz......1,5

Limit values

The highest DC voltage collector-emitter, V ...... 60
The highest constant voltage emitter-base, V ...... 4
The highest direct collector current, A, provided that the permissible dissipation power is not exceeded ...... 1
The highest constant dissipated power, W, at an ambient temperature of -60...+25°С......0,5
+85 °С......0,25
Operating range of ambient temperature, °C......-60...+85

On fig. Figure 2 shows a typical dependence of the static current transfer coefficient of the base h21e of transistors KT529A and KT530A on the collector current Ik, in fig. 3 - from the collector-emitter voltage Uke, and in fig. 4 - saturation voltage of the collector-emitter Uke us from the base current IB at various values of the collector current Ik.

Complementary transistors KT529A and KT530A

A fragment of the circuit shown in fig. 5 illustrates one of the possible applications of the described devices, in particular the KT530A transistor.

In remote controls for modern TVs, field-effect transistors KP505G with an insulated gate (foreign functional analogue - IRML24) are used as an output current amplifier. The operating mode of the transistor is switching, the load is an infrared emitting diode. This amplifier should, with minimal input power consumption, provide the lowest possible channel impedance. These stringent requirements predetermine the very high cost of the transistor.

The use of the Belarusian TV Horizont instead of the KP6G transistor KT5A in the output current amplifier of the RC505-530 remote control (see Fig. 5) made it possible, in addition to reducing the cost of the remote control, to significantly expand its coverage area, both in distance to the TV and in visibility angle. The resistance of the limiting resistor R1 is determined by the minimum value of the static current transfer coefficient of the base of the transistor VT1 (> 200), the operating current of the radiating diode BI1 (600 mA) and the minimum signal amplitude from the MDATA output (pin 7) of the DD1 chip (foreign analogue - INA3010D).

As the ambient temperature rises from +25 to +85°C, the maximum allowable dissipation power decreases linearly.

Author: A. Shtyrev

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