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FACTORY TECHNOLOGIES AT HOME - SIMPLE RECIPES
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Black stain for aluminium. Simple recipes and tips

Factory technologies - simple recipes

Directory / Factory technology at home - simple recipes

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To obtain black stain for aluminum the surface of an aluminum object is first polished with the finest powder of emery, then lubricated with olive oil and heated, with frequent lubrication with this oil, over an alcohol lamp until the olive oil turns black.

After that, the heating is stopped and after cooling the object, the oil is wiped off with a rag.

Author: Korolev V.A.

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Samsung begins production of 3D memory chips 08.08.2013

Samsung Electronics has announced the start of mass production of new 16 GB NAND flash memory chips. For the first time on an industrial scale, the technology for placing cells in a 3D V-NAND structure is implemented in the new microcircuits.

From its inception 40 years ago to today, flash memory has been a planar, two-dimensional cell structure. Until now, the reduction of the technological process of production has allowed to increase the density of information storage. However, as the process approached the 10-nm standard, interference began to occur between memory cells, as a result of which the reliability of data storage fell below the permissible limit.

3D V-NAND technology is designed to solve this problem: to open a new way to increase storage density in the future, while maintaining a technological norm that will provide the required level of reliability.

In new memory chips made using 3D V-NAND technology, the cells are arranged relative to each other in three dimensions. The vertical connection of the cells is provided by special conductors. In one microcircuit there can be up to 24 layers with cells, while through special holes the conductor can pass through other layers in isolation and, for example, connect the cells of the first and twenty-fourth layers.

Samsung claims that 3D V-NAND allows you to achieve an 8-fold increase in capacity: for example, equip a laptop with 128 TB of memory instead of 1 GB.

However, the new technology allows not only to increase the density, but also to obtain much higher reliability (by 2-10 times) compared to NAND-memory based on the 10-nm process technology. In addition, 3D V-NAND provides faster write speeds - twice as fast, according to Samsung.

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