Complementary powerful transistors of the KT8115, KT8116 series. Reference data

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Complementary powerful transistors of the KT8115, KT8116 series. Reference data

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Silicon high-power composite transistors KT8115A - KTV115V (p-n-p structures) and KT8116A - KT8116V (n-p-n), manufactured using epitaxial-planar technology, are intended for operation in the final stages of 3Ch amplifiers, in voltage converters and other equipment of a wide range applications. The devices are housed in a plastic case KT-28 (TO-220) with rigid stamped tinned leads (Fig. 1). The weight of the device is no more than 2,5 g.

Complementary power transistors of the KT8115, KT8116 series

Foreign analogs: KT8115A - TIP127, KT8115B - TIP126, KT8115B - TIP125, KT8116A - TIP122, KT8116B - TIP121, KT8116B - TIP120.

Main characteristics at Tacr.av = 25°C

Collector-emitter boundary voltage, V, not less, with a collector current of 100 mA and zero base current for KT8115A, KT8116A......100
KT8115B, KT8116B......80
KT8115V, KT8116V......60
Reverse collector current, mA, no more, at maximum collector-base voltage and zero emitter current......0,2
Reverse collector-emitter current, mA, no more, for KT8115A, KT8116A (at collector-emitter voltage 50 V), KT8115B, KT8116B (40 V), KT8115V, KT8116V (30 V) .....0.5
Reverse emitter current, mA, no more, at a base-emitter voltage of 5 V and zero collector current......2
Static base current transfer coefficient, not less, at a collector-emitter voltage of 3 V and an emitter current of 0,5 A and FOR......1000
Collector-emitter saturation voltage, V, no more, with a collector current of 3 A and a base current of 12 mA......2
5 A and 20 mA respectively......4
Base-emitter saturation voltage, V, no more, with a collector current of 3 A and a base current of 12 mA...... 2,5
Module of base current transfer coefficient, not less, at a collector-emitter voltage of 4 V, collector current of 3 A and frequency of 1 MHz.....4
Thermal resistance transition-housing, °С/W, max......1,92

Limit values

Highest collector-base voltage, V, for KT8115A, KT8116A......100
KT8115B, KT8116B.....80
KT8115V, KT8116V......60
Highest collector-emitter voltage, V, for KT8115A, KT8116A.....100
KT8115B, KT8116B......80
KT8115V, KT8116V......60
The highest emitter-base voltage, V ...... 5
The highest DC collector current, A ...... 5
The highest collector pulse current, A ...... 8
The highest direct current of the base, A ...... 0,12
The highest constant power dissipation of the collector, W, with a heat sink......65
The highest transition temperature, ° С ...... 150
Ambient temperature operating range, °С -60...+125

The permissible value of static potential is 2000 V (VI degree of hardness according to OST 11073.062). The use of transistors is not permitted at the limit values of two or more parameters. To increase reliability, it is recommended to operate devices with parameter values of no more than 70% of the maximum permissible values.

When installing transistors into a device under voltage, the base terminal must be soldered first, and when dismantled, disconnected last. It is not recommended to operate transistors at an operating current comparable to the uncontrolled reverse current of the transitions throughout the entire operating temperature range.

No more than one-time bending of the leads is allowed. The bending point should not be closer than 5 mm from the body, the bending radius should be at least 1,5 mm. During bending, it is necessary to take measures to prevent the transfer of force to the body.

In Fig. Figure 2 shows a typical dependence of the static current transfer coefficient of the transistor base, and Fig. 3 - typical dependences of the collector-emitter and base-emitter saturation voltage on the collector current.

Complementary power transistors of the KT8115, KT8116 series

When the temperature of the transistor body increases above +25°C, the power dissipated by the collector must be reduced in accordance with the curve shown in Fig. 4.

Complementary power transistors of the KT8115, KT8116 series

Rice. 5 defines the area of safe operation of transistors in static and pulsed modes.

Complementary power transistors of the KT8115, KT8116 series

Author: V.Kiselev, Minsk

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