ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING silicon photodiodes. Reference data Encyclopedia of radio electronics and electrical engineering / Reference materials Silicon photodiodes are intended for use as receivers of infrared radiation as part of optical sensors. They are used in photoelectric automation systems, in devices for non-contact temperature measurement, computer and measuring equipment, program-controlled equipment operating at a radiation wavelength in the range of 0,5 ... 1,12 microns. Actually, the receiver of the photodiode is its pn junction. Under the action of radiation, the CVC of the transition changes significantly. Photodiodes may contain one photosensitive element, two (FD-20-Z0K), four (FD-19KK) and more. The photosensitive field of the FD-246 photodiode is divided into 12 (or 64) elements. This allows the output signal to be captured in a six-bit Gray code. The geometric shape and dimensions of the elements can also be different. An immersion cone was used as an entrance window for the FD-K-227 photodiode, and a light guide was used for the FD-252 and FD-252-1. The input window of the FD-20 Z0K device does not have a protective transparent "glass". Photodiodes are produced in a sealed glass-to-metal housing of various designs. The positive terminal of the device is marked either with a dot of a contrasting color on the body, or with a piece of colored PVC tube on the wire terminal. In the absence of labels, a longer output is positive. The devices operate in two electrical modes - with external bias and without bias. In the first of them, the photodiode provides high current monochromatic sensitivity, in the second - high detectability. The main dimensions, pinout and spectral characteristics of the sensitivity of silicon photodiodes are shown in fig. 1-23.
The main technical characteristics of the devices are summarized in Table. 1. Dashes in the table mean that the crossed out parameters of the corresponding device are not standardized according to the specifications. Basic parameters, their dimensions and definitions (according to GOST 21934-83) Spectral sensitivity region, µm - wavelength interval of the spectral characteristic, in which the sensitivity of the radiation receiver exceeds 10% of the maximum value. The wavelength of the maximum spectral sensitivity, µm is the wavelength corresponding to the maximum spectral sensitivity characteristic. Working voltage. V is a constant voltage applied to the receiver, at which the nominal values of the parameters are provided for long-term operation. Ramp current, A - current flowing through the radiation receiver at a given voltage on it in the absence of a radiation flux. Photocurrent (photosignal current), A - current flowing through the receiver at the specified voltage on it, due to the influence of the radiation flux. Integral current sensitivity, A/lm - the ratio of the photocurrent to the power of the radiation flux (of a given spectral composition) that caused the appearance of the photocurrent. Sensitivity threshold, W - RMS value of the first harmonic of the modulated measurement stream acting on the receiver with a given spectral distribution, at which the RMS value of the first harmonic of the voltage (current) of the photosignal is equal to the root-mean-square value of the voltage (current) noise in a given band at the modulation frequency of the stream radiation. Sensitivity threshold in a single frequency band, VgPts (or lmlGHz) - the sensitivity threshold of the radiation receiver, reduced to a single frequency band of the amplifier. Photoelectric coupling coefficient, % (or rel. units) - the ratio of the voltage (current) value of the photo signal of an unilluminated (non-irradiated) photosensitive element located next to the illuminated (irradiated) to the value of the voltage (current) of the photo signal illuminated (for multi-element radiation detectors). Detection power, W~' - the reciprocal of the sensitivity threshold. Flat angle of view (2c), deg. is the angle in the plane normal to the photosensitive element between the directions of incidence of the parallel beam of radiation, at which the voltage (current) of the photosignal of the radiation receiver decreases to a predetermined level. In table. 1, among others, there is a parameter "time constant of the radiation receiver, s", which is absent in GOST21934-83. In the departmental normal, this parameter is defined as the time from the beginning of the impact on the photodetector of a rectangular pulse of optical radiation until the moment when the voltage of the photosignal reaches a value equal to 1 - 1/e of the maximum value (see the book Aksenenko M. D., Baranochnikova M. Ya, Smolina O. V. Microelectronic photodetectors. - M.: Energoatomizdat, 1984, p. 137). The time constant t determines the value of the upper limiting frequency of reproduction of the pulse signal that modulates the radiation flux: Fv.rp ° 1/2πt (if t is in seconds, then the frequency Fv.rp is in hertz). The photodiode FD-9K (Fig. 7, a) is produced in two modifications - with photosensitive element dimensions of 4,4x4,4 mm or 5,6x5,6 mm. The working field of the FD-20-ZZK device (Fig. 15a) is composed of two pairs of photosensitive elements 0,3x1,4 mm and 0,4x1,4 mm in size. Devices FD-246 are designed in a unified metal case (Fig. 20) with the number of leads corresponding to the number of photosensitive elements. The conclusions of the photodiodes FD-7K, FD-9K, FD-17K, FD-18K, FD-24K are made in the form of flat petals with a hole for soldering conductors. For photodiodes FD-6K, FD-8K, FD-10K, FD-21-KP, FD-23K, FD-25K, FD-26K, FD-27K, FD-28KP, FD-K-155, FD-K- 227, FD-256 flexible, multi-wire leads. Photodiodes FD-11 (Fig. 8) are produced with both multi-wire flexible and single-wire leads. The photodiodes FDK-1 and FDK-1 in (Fig. 1) have a positive terminal of retinues of two wires. Devices of some types (for example, FD-28KP. Fig. 17, a) have an additional output from the screen housing. The technological spread zone is shaded on the graphs of spectral characteristics. Silicon photodiodes are capable of operating within a very wide range of operating parameters. The values of these parameters are presented in Table. 2. In conclusion, we note that in the process of serial production of devices, many changes and clarifications are made to the technical documentation regarding electrical characteristics and operating modes. Therefore, the above information should be used to pre-select a device of one type or another, after which it is necessary to refer to the specifications for it. Literature
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