Powerful field-effect transistors of the KP742 series. Reference data

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Powerful field-effect transistors of the KP742 series. Reference data

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Silicon n-channel field-effect transistors KP742A and KP742B with an insulated gate, channel enrichment, with a built-in protective reverse diode are manufactured using a pitaxial-planar technology. The devices are designed to work in secondary power sources with transformerless input, in regulators, stabilizers and voltage converters with continuous and pulse control, in electric motor drives and other equipment used in everyday life and industry.

The transistors are housed in a plastic rectangular case KT-43 (TO-218) with rigid stamped tinned leads (Fig. 1); weight of the device - no more than 6 g.

Powerful field-effect transistors of the KP742 series

Foreign analogue of the transistor KP742A - STH75N06, KP742B - STH75N05 from SGS-THOMSON.

Main technical characteristics at Тkorp = 25 °С

Threshold voltage, V, at a drain current of 0,25 mA and connected gate and drain......2...4
Open channel resistance, Ohm, no more, with a pulse duration of not more than 300 μs and a duty cycle of at least 50, with a drain current of 40 A and a gate-source voltage of 10 V for KP742A ...... 0,014
KP742B ...... 0,012
Residual drain current, μA, no more, at maximum drain-source voltage and zero gate-source voltage ...... 250
Gate leakage current, nA, no more, at gate-source voltage ±20 V and zero drain-source voltage ...... ±100
I–V characteristic slope, A/V, not less, with a pulse duration of not more than 300 µs and a duty cycle of at least 50, at a drain-source voltage of 10 V and a drain current of 40 A......25
Maximum amplification frequency, MHz, not less......1
Turn-on time*, µs, max, at drain-source voltage 25 V, drain current 40 A, signal source output impedance 6,2 Ohm, drain circuit resistance 50 Ohm, gate-source voltage 10 V, pulse duration no more than 300 μs and their duty cycle is not less than 50 ...... 1,57
Turn-off time*, µs, max, at drain-source voltage 40 V, drain current 75 A, signal source output impedance 50 Ω, drain circuit resistance 50 Ω, gate-source voltage 10 V, pulse duration not more than 300 µs and their duty cycle is not less than 50 for KP742A ...... 0,97
KP742B ...... 1,08
Transistor capacitance*, pF, not more, at drain-source voltage 25 V, zero gate-source voltage and frequency 1 M Hz input ...... 5200
weekend ...... 2300
through passage......650
Thermal resistance crystal-case, С/W, no more than......30
Constant forward voltage of an open protective diode. V, no more, at zero gate-source voltage, pulse duration not more than 300 μs and their duty cycle of at least 50 for KP742A at a current through the drain output of 75 A and KP742B - 80A ...... 1,6
Diode reverse recovery time*, not, at a drain-source voltage of 35 V, a diode current rise rate of 100 A/µs, a pulse duration of no more than 300 µs, and a duty cycle of at least 50 for KP742A at a current through the drain output of 75 A and KP742B - 80 A ...... 130

* Reference parameters.

Limit values

The highest drain-source voltage, V, for KP742A......60
KP742B ...... 50
Maximum gate-source voltage, V ...... ± 20
The highest direct drain current *, A, at a case temperature of not more than 25 ° C for KP742A ...... 75
KP742B ...... 80
The highest pulsed drain current *, A, for KP742A......300
KP742B ...... 320
The highest forward current of the protective diode, A, for KP742A......75
KP742B ...... 80
Maximum continuous dissipated power**, W, at case temperature 25 °С......200
The highest temperature of the crystal, "C ...... 175
Ambient temperature operating range, "С......-55...+150

* Provided that the values of the maximum dissipated power and the temperature of the crystal are not exceeded.

** At an ambient temperature of more than 25 °C, the maximum allowable power Pmax must be reduced in accordance with the formula

where Tkp max and Tkorp are the values of the maximum allowable temperature of the crystal and the current temperature of the transistor case; Rt kr-corps - thermal resistance of the crystal-case.

Permissible value of static potential - 500 V in accordance with OST 11 073.062. The mode and conditions for mounting transistors in equipment - according to OST 11 336.907.0.

Graphical typical dependences of the parameters of transistors KP742A and KP742B are shown in fig. 2-7.

Powerful field-effect transistors of the KP742 series

On fig. 2, a and b show the families of output characteristics of devices at two values of case temperature, and in fig. 3 - temperature dependence of the open channel resistance (normalized with respect to the point where the crystal temperature Tcr = 25 °C). Rice. 4 illustrates the relationship between drain current and gate-source voltage.

Powerful field-effect transistors of the KP742 series

The dependences of the input, output and throughput capacitance of the devices on the drain-source voltage are shown in fig. 5. The drain current should be reduced as the case temperature rises according to the curve in fig. 6.

Powerful field-effect transistors of the KP742 series

The voltage drop across an open protective diode, depending on the forward current through it, is shown in fig. 7 (here Ic is the current through the drain output of the device).

Powerful field-effect transistors of the KP742 series

Author: V.Kiselev, Minsk, Belarus

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