Modernization of the transverter S. Zhutyaev. Scheme, description

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Modernization of the transverter S. Zhutyaev. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Civil radio communications

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A slight refinement of the high-frequency amplifier in the transverter designed by S. Zhutyaev (UW3FL) for the range of 144 MHz [1] made it possible to make the noise figure of the set-top box not exceed 1,6 dB with a transceiver noise figure of 10 dB. The newly introduced elements on the fragment of the transverter circuit (Fig. 1) are shown in color. Resistors R22, R23 must be excluded. Instead of the transistor GT329A (V9), KT3101-A2 was used.

Modernization of S. Zhutyaev's transverter
Ris.1

The part of the board that has undergone alteration is shown in Fig. 2 in 1:1 scale.

The screen partition is made of tinned sheet 0,3...0,8 mm thick and soldered to the board along the entire length, as indicated in the drawing. Its height is 35...40 mm. At the junction of the base of the transistor with the terminal of the capacitor C40, a window with dimensions of 3x8 mm was made in the partition. All elements must be placed at a distance of no more than 1 mm from the board.

Modernization of S. Zhutyaev's transverter
Ris.2

The RF amplifier uses MLT-0,125 resistors, a DPM-0,6 choke or the like. Instead of the KT3101-A2 transistor, you can turn on KT399A, KT391-A2, KT3115-A2, KT3120A. Recommended transistor mode for direct current:

Transistor	Ik, mA	Uke, V
KT3101-A2	5,5	5
KT391-A2	3	7
KT399A	4	5
KT3115-A2	4	7
T3120A	5	5

In some cases, when using a transistor with a high gain, it is advisable to put a ferrite ring on the base terminal (its initial magnetic permeability does not matter much) with an inner diameter of 1 ... 2 mm. This will increase the resistance of the amplifier to self-excitation.

UHF tuning has no features.

Literature

Zhutyaev S. VHF transverter. - Radio, 1979, N1.c. 13-16, 1st p. incl.

Author:V. Kharchenko (RB4EXN), Dneprodzerzhinsk; Publication: N. Bolshakov, rf.atnn.ru

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