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WINGED WORDS, PHRASEOLOGICAL UNITS
Directory / Winged words, phraseological units / The third must leave

Winged words, phraseological units. Meaning, history of origin, examples of use

Winged words, phraseological units

Directory / Winged words, phraseological units

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The third must go

"Way to the Pier"
"Way to the Pier"

Phraseologism: The third must escape.

Meaning: About solving the problem of the so-called love triangle.

Origin: From "Song of a Friend" (1961), written by the composer Andrei Petrov to the verses of the poet Grigory Pozhenyan for the film "The Way to the Pier" (1962, directed by Georgy Daneliya).

Random phraseology:

And Mars will bloom on apple trees.

Meaning:

Phrase-symbol of the first romantic years of the Soviet cosmonautics.

Origin:

Title and line from a song written by the composer Vano Muradeli to the verses of the poet Yevgeny Aronovich Dolmatovsky (1915-1994) for the film "Towards a Dream".

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Random news from the Archive

New computer memory is 10 times faster than old 24.06.2013

Scientists from the University of California and Nanyang Technological University (Singapore) have created a computer memory that is much faster and more durable than modern memory.

The prototype device is made of bismuth ferrite and consumes less power with much faster write and read speeds. The memory chip prototype is a structure with 16 cell elements that react to light. In conventional computer memory, information is stored in cells that contain varying amounts of electrical charge, thus determining where is "0" and where is "1". Bismuth ferrite is different in that it can be in one of two states of polarization and almost instantly switch between these states under the influence of a light pulse. That is, the new device demonstrates ferroelectric properties.

Ferroelectric memory is considered very promising because it is characterized by high speed and low power consumption. However, this technology has not yet found wide application, in particular, due to the fact that for reliable storage of information it is necessary to rewrite the ferroelectric memory after each access to it. As a result, there are problems with the service life.

The new device is devoid of this drawback. Applying voltage during recording creates a polarization of the material, subsequently, the action of a light pulse causes a photoelectric reaction: a current is generated, the voltage of which can be used to determine the state of polarization, i.e. "1" or "0". At the same time, the voltage is easily read using conventional electrodes or transistors, and a bright light pulse does not change the polarization of the material. Thus, there is no need to overwrite the data after each read.

The new non-volatile storage device is much faster than all modern memory chips: the process of reading or writing takes no more than 10 nanoseconds - this is 10 thousand times faster than current memory. Moreover, for writing/reading, the new chip requires only 3 V, while for example flash memory requires 15 V.

So far, the only obstacle to the mass introduction of a new type of memory is the need to create a technology for high-precision illumination of each cell. So far, in laboratory conditions, the entire lattice of the chip is illuminated, but this is not suitable for reading each individual bit. Engineers will have to develop optical elements that allow each cell to be illuminated during the read operation, and then the energy-efficient, reliable and fast memory that is so necessary for modern electronic devices will appear on the market.

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