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ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING
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High-frequency oscillators with an output power level of one to tens of watts. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Knots of amateur radio equipment. Generators, heterodynes

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The practical circuit of the generator (Fig. 1) on the KP901A transistor in the frequency range of 30 ... 80 MHz provided Pout \u2,5d 904 W. A similar circuit on the KP20A transistor had Pout = 4 W at a frequency of fo = 52 MHz and Up = 36,4 V (power consumption 15 W, dissipated 2 W). Values ​​L5,6=2 MH, C760=2 pF, R=XNUMX Ohm.

High-frequency oscillators with an output power level of one to tens of watts
Ris.1

At low frequencies with high output power (a few to tens of watts), non-saturable compound transistors can be used in generators, in which a powerful FET controls a more powerful bipolar transistor. Figure 2 shows a diagram of a quartz oscillator based on a composite transistor.

High-frequency oscillators with an output power level of one to tens of watts
Ris.2

Figure 3 shows the dependences of the consumed current and output power on temperature. The maximum changes in these parameters did not exceed 2,3 and 3,5%, respectively, when the temperature changed from 25 to 70°C. With a drain current cutoff angle Q=70°, the generator provided an output power of 10 W with a total efficiency of 65%. Generation frequency 7,41 MHz, the average hourly frequency instability did not exceed 2 * 10-7.

High-frequency oscillators with an output power level of one to tens of watts
Fig.3. Current consumption dependencies (1) and output
power (2) on ambient temperature.

High-frequency oscillators with an output power level of one to tens of watts
Fig.4. Levels of phase noise of self-oscillators on powerful PTS (1)
Microwave bipolar transistors (2) and Gunn diodes (3)

Thus, self-oscillators on powerful FETs cover almost all used frequency ranges. For a number of applications, the phase noise levels of self-oscillators are important. As follows from Fig. 4, in this parameter, GaAs microwave generators of high-power FTSs are inferior to generators based on microwave bipolar transistors and Gunn diodes. It is expected that the level of modulation noise will decrease by 20 dB when developing high-power PTSs with a submicron channel length.

Literature

  1. Circuitry of devices on powerful field-effect transistors. Directory. Edited by V.P. Dyakonov.

Publication: N. Bolshakov, rf.atnn.ru

See other articles Section Knots of amateur radio equipment. Generators, heterodynes.

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