Flash memory Nano Flash-100 from Toshiba. Free Technical Library News

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Nano Flash-100 flash memory from Toshiba

09.02.2013

Toshiba has introduced a development in the field of flash memory, called Nano Flash-100. This is an embedded flash memory for microcontrollers that is significantly faster than the Nano Flash flash memory used by Toshiba for a relatively long time.

Nano Flash combines the features of NAND and NOR technologies: the high write speed of NAND and the NOR circuit design.

With the Nano Flash-100, random access at 100 MHz is performed without sleep cycles, which is the best in the industry. The new memory inherits ultra-low power consumption from Nano Flash.
Toshiba's first Nano Flash-100 product will be the TMPM440F10XBG microcontroller. The release of other products on the ARM architecture is also planned.

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G.Skill DDR4-3333 Low Latency Memory Modules 23.08.2016

G.Skill presented at IDF 2016 new DDR4-3333 memory kits tuned to work with the Intel Broadwell-E platform. Although modules with this frequency have been present in the G.Skill assortment for two years, this time the company paid attention to other characteristics: volume and delays.

It's no secret that RAM latency is growing irreversibly with each new generation of memory: ten years ago, 2-2-2-5 was considered an excellent value, now it is 13-13-13-33 for a 4 GB Trident Z DDR3333-64 kit dialed eight planks. A couple of years ago, modules of this frequency showed delays of 16-16-16-36, so there is progress in this area.

Also included are updates to the G.Skill Trident Z and Ripjaws (SO-DIMM) families of modules. In the first case, the volume of the kit reached 128 GB, it was also filled with eight bars, and the timings slightly increased to 14-14-14-34. In the second case, the total volume of 32 GB required only two bars, and the delays were 16-18-18-43.

All new items are based on Samsung RAM chips and operate at a voltage of 1,35 V.

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