Powerful microwave transistors Philips Semiconductors. Reference data

Encyclopedia of radio electronics and electrical engineering / Reference materials

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Microwave transistors are used in many areas of human activity: television and radio broadcast transmitters, repeaters, civil and military radars, base stations of a cellular communication system, avionics, etc.

In recent years, there has been a noticeable trend in the transition from bipolar technology for the production of microwave transistors to VDMOS (Vertical Diffusion Metal Oxide Semiconductors) and LDMOS (Laterally Diffused Metal Oxide Semiconductors) technologies. The most advanced LDMOS technology has the best features such as linearity, gain, thermal performance, mismatch tolerance, high efficiency, power dissipation margin, reliability. Philips transistors are extremely repeatable from batch to batch and Philips is proud of that. When replacing failed transistors, you do not have to worry about the process of setting up the equipment again, since all the parameters of the transistors are absolutely identical. None of the Philips competitors can boast of this.

All new Philips developments are based on the new modern LDMOS technology.

Transistors for cellular base stations

In addition to transistors packaged in cases, Philips produces integrated modules.

Distinctive features of integrated modules:

• LDMOS technology (soldering directly to the heatsink, linearity, higher gain), o lower distortion,
• less heating of the semiconductor due to the use of a copper flange, o integrated temperature offset compensation,
• 50 ohm inputs/outputs,
• linear amplification,
• support for many standards (EDGE, CDMA).

Recommended solutions for GSM standard: at 800 MHz: BGF844 + BLF1049 at 900 MHz: BGF944 + BLF1049 at 1800 MHz: BGF1801-10 + BLF1820-10 at 1900 MHz: BGF1901-10 + BLF1820-10

Recommended solutions for CDMA standard: at 800 MHz: BGF802-20 + BLF0810-180 at 1900 MHz: BGF1901-10 + BLF1820-90

Recommended solutions for the EDGE standard:

BGF0810-90

• output power: 40W,
• gain: 16 dB,
• Efficiency: 37%,
• Adjacent Channel Power Attenuation ACPR: -60dB,
• EVM error vector amplitude: 2%.

BLF1820-90

• output power: 40W,
• gain: 12 dB,
• Efficiency: 32%,
• Adjacent Channel Power Attenuation ACPR: -60dB,
• EVM error vector amplitude: 2%.

Transistors for broadcast stations

For the past 25 years, Philips has been a leader in this field. Using the latest advances in LDMOS technology (BLF1xx, BLF2xx, BLF3xx, BLF4xx, BLF5xx, series) allows you to constantly strengthen your position in the market. An example is the huge success of the BLF861 transistor for TV transmitters. Unlike competitive transistors, the BLF861 has proven itself to be a highly reliable and highly stable element, protected from failure when the antenna is disconnected. None of the competitors could come close to the characteristics of the BLF861 in terms of stability. We can name the main areas of application for such transistors: transmitters for frequencies from HF to 800 MHz, private radio stations PMR (TETRA), VHF transmitters for civil and military purposes.

Table 5. L- and S-band radar transistors

 

Table 6. Avionics transistors

The main characteristics of the transistor BLF861A

• Push-pull transistor (push-pull amplifier),
• output power over 150W,
• gain over 13 dB,
• Efficiency over 50%,
• covers the band from 470 to 860 MHz (bands IV and V),
• reliable, resistant to mismatch,
• resistant to antenna disconnection,
• is the industry standard in TV transmitters today.

New transistor model BLF647

• designed based on BLF861A,
• large gain of 16 dB at 600 MHz,
• output power up to 150 W,
• covers the band from 1,5 to 800 MHz,
• reliable, resistant to mismatch,
• resistant to antenna disconnection,
• has a built-in resistor that allows you to work at frequencies HF and VHF,
• Push-pull transistor (push-pull amplifier).

Transistor BLF872

• is being developed as a more powerful replacement for the BLF861A,
• start of production 1st quarter 2004,
• output power up to 250 W,
• the most reliable transistor in terms of resistance to mismatch,
• maintains linearity,
• maintains reliability,
• current displacement Idq less than 10% for 20 years,
• gain more than 14 dB,
• covers the band from 470 to 860 MHz.

Transistors for radar and avionics

The new Philips transistors for radar and avionics are also manufactured using state-of-the-art LDMOS technology. Crystals made using LDMOS technology heat up less, are more reliable, have higher amplification, and do not require an insulator between the substrate and the heatsink. Accordingly, fewer transistors are required to achieve the same performance, further improving reliability and reducing product cost.

New developments:

BLA0912-250

• band from 960 to 1250 MHz (all major avionics frequencies),
• high gain up to 13 dB,
• reliability, resistance to phase mismatch 5:1,
• linearity,
• samples will be available from June 2003.

BLS2934-100

• band from 2,9 to 3,4 GHz (all major avionics frequencies),
• use of a standard non-pressurized housing,
• samples will be available by the end of 2003.

To sum it up, Philips is moving with the times and offering transistors that enable new devices with better features: smaller size, higher power output, fewer piping components and lower end product cost.

Author: Vladimir Zakharov, zww@gamma.spb.ru; Publication: cxem.net

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