Field effect transistors. Typical applications. Reference data

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Field effect transistors. Typical applications. Reference data

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Transistor	appointment
2P101	for operation in the input stages of low-frequency and DC amplifiers with high input impedance
KP102	for operation in the input stages of low-frequency and DC amplifiers with high input impedance
2P103 2P103-9	for operation in the input stages of low-frequency and DC amplifiers with high input impedance
2PS104	for operation in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance
2P201	for operation in the input stages of low-frequency and DC amplifiers with high input impedance
2PS202	for operation in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance
KPS203	for operation in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance
KP301	for use in the front end of low-noise amplifiers and non-linear small-signal circuits with high input impedance
KP302	for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices
KP303	designed for use in the input stages of amplifiers of high (D, E, I) and low (A, B, C, G) frequencies with high input impedance. KP303G transistors are designed for use in charge sensitive amplifiers and other nuclear spectrometry circuits.
KP304	designed for use in switching and amplifying circuits with high input impedance
2P305	designed for use in high and low frequency amplifier stages with high input impedance
KP306	designed for use in converter and amplifying stages of high and low frequencies with high input impedance
KP307	designed for use in the input stages of high and low frequency amplifiers with high input impedance. KP307Zh transistors are designed for use in charge-sensitive amplifiers and other nuclear spectrometry circuits.
2P308-9	designed for use in the input stages of low-frequency and direct current amplifiers (A, B, C), in switching circuits and switch circuits (G, D) with high input impedance.
KP310	for use in microwave transceivers
KP312	designed for use in the input stages of amplifiers and converters in the microwave range
KP313	designed for use in high and low frequency amplifier stages with high input impedance
KP314	for use in cooled cascades of preamplifiers of nuclear spectrometry devices
KPS315	for operation in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance
KPS316	for operation in the input stages of differential amplifiers, balanced circuits for various purposes with high input impedance
3P320-2	arsenidogallium field-effect transistors with a Schottky barrier for microwave amplifying devices with normalized noise figure at a frequency of 8 GHz
3P321-2	arsenidogallium field-effect transistors with a Schottky barrier for microwave amplifying devices with normalized noise figure at a frequency of 8 GHz
KP322	tetrode based on pn junction for amplifying and mixing stages at frequencies up to 400 MHz
KP323-2	p-n junction transistor for low-noise low-noise pre-amplifiers of low and high frequencies (up to 400 MHz)
3P324-2	arsenidogallium field-effect transistors with a Schottky barrier for microwave amplifying devices with normalized noise figure at a frequency of 12 GHz
3P325-2	arsenidogallium field-effect transistors with a Schottky barrier with normalized noise figure at a frequency of 8 GHz for microwave devices with a low level of noise, as well as for photodetectors with a low level of intrinsic noise
3P326-2	17.4 GHz Schottky-barrier FETs for use in front-end and downstream low-noise amplifiers
KP327	MOS tetrode with n-channel and diode-protected gates for VHF and UHF television channel selectors
3P328-2	arsenidogallium field-effect transistors with a Schottky barrier with normalized noise figure at a frequency of 8 GHz for use in the input and subsequent stages of low-noise amplifiers
KP329	for use in the input stages of amplifiers of low and high frequencies (up to 200 MHz), in switching devices and switches with high input impedance
3P330-2	gallium arsenide field-effect transistors with a Schottky barrier with normalized noise figure at a frequency of 25 GHz (3P330A-2, 3P330B-2) and 17.4 GHz (3P330V-2) for use in the input and subsequent stages of low-noise amplifiers
3P331-2	arsenidogallium field-effect transistors with noise figure rated at 10 GHz Schottky barrier for low-noise and extended dynamic range amplifier applications
2P332	p-channel field effect transistor for switching and amplifying devices
2P333	field-effect n-channel transistor for use in the input stages of amplifiers of low and high frequencies (up to 200 MHz), in switching devices and switches with high input resistance
2P335-2	for amplifying devices
2P336-1	for switching and amplifying devices
2P337-R	transistors selected in pairs according to electrical parameters are designed for use in balanced amplifiers, differential amplifiers with high input impedance at frequencies up to 400 MHz
2P338-R1	transistors selected in pairs according to electrical parameters are designed for use in balanced amplifiers, differential amplifiers with high input impedance
3P339-2	Noise-rated Schottky FETs at 8 and 17.4 GHz for use in low-noise, extended dynamic range, and wideband amplifiers
2P341	transistor with pn junction for input stages of low-noise amplifiers in the frequency range 20 Hz - 500 MHz
KP342	for switching devices
3P343-2	12 GHz Schottky-barrier FETs for use in front-end and downstream low-noise amplifiers
3P344-2	4 GHz Schottky-barrier FETs for use in front-end and downstream low-noise amplifiers
3P345-2	gallium arsenide field-effect transistors with a Schottky barrier for use in photodetectors with a low level of intrinsic noise
KP346-9	MOS n-channel double-gate transistor with diode-protected gates for TV receiver channel selectors (A, B - for decimeter waves, C - for meter waves)
2P347-2	n-channel double-gate transistor for the input stages of radio receivers
KP350	designed for use in amplifying, generating and converting cascades of ultra-high frequency (up to 700 MHz)
KP351	transistors with a Schottky barrier with two gates (3P351A-2) and with one gate (3P351A1-2), designed for use in low-noise amplifiers, mixers and other devices in the centimeter range
KP365A	BF410C n-channel transistor
KP382A	BF960 double-gate FET channel selectors DH
KP501A	ZVN2120 high voltage MOSFET used as a key for analog communications
KP601 2P601-9	field-effect transistors with a diffusion gate and an n-channel, operation in the input and output stages of amplifiers and frequency converters
AP602-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel, work in power amplifiers, self-oscillators, frequency converters in the frequency range of 3-12 GHz
3P603-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel, work in power amplifiers, self-oscillators, frequency converters in the frequency range up to 12 GHz
3P604-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel, work in power amplifiers, self-oscillators, frequency converters in the frequency range of 3-18 GHz
3P605-2	gallium arsenide field-effect transistors with a Schottky barrier and n-channel, work in low-noise amplifiers and amplifiers with extended dynamic range
3P606-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel, work in power amplifiers, self-oscillators, frequency converters in the frequency range up to 12 GHz
3P607-2	arsenidogallium field-effect transistors with n-channel for operation in power amplifiers, generators, frequency converters in the frequency range up to 10 GHz
3P608-2	arsenidogallium field-effect transistors with a Schottky barrier and an n-channel for operation in the output stages of amplifiers and generators
KP701	Insulated gate field-effect transistors for secondary power supplies, switching and switching devices with switching frequencies up to 1 MHz
KP702	field-effect transistors with an insulated gate and n-channel for secondary power supplies, switching and pulse devices, key stabilizers and voltage converters, amplifiers, generators
KP703	field-effect transistors with an insulated gate and a p-channel for secondary power supplies, switching and pulse devices, key stabilizers and voltage converters, amplifiers, generators
KP704	field-effect transistors with an insulated gate and n-channel for use in the output stages of terminal video amplifiers of multicolor graphic displays, in secondary power supplies, in switching devices for electrical circuits
KP705	insulated gate field effect transistors with n-channel for use in switching power supplies, in switching and switching devices
KP706	insulated gate field effect transistors with n-channel for use in switching power supplies, in switching and switching devices
KP709	field-effect transistors with an insulated gate and an n-channel for use in switching power supplies for TV receivers of the fourth and fifth generations, switching and impulse devices of radio-electronic equipment, and electric drive devices. Similar to BUZ90, BUZ90A Siemens.
KP712	field-effect transistors with an insulated gate and a p-channel for operation in pulse devices
KP717B	IRF350 MOSFET with 400V, 0.3ohm
KP718A	BUZ45 MOSFET with 500 V, 0.6 ohm
KP718E1	IRF453 MOSFET with 500V, 0.6ohm
KP722A	BUZ36 MOSFET with 200 V, 0.12 ohm
KP723A	IRF44 MOSFET with 60V, 0.028ohm
KP723B	IRF44 MOSFET with 60V, 0.028ohm
KP723V	IRF45 MOSFET with 60V, 0.028ohm
KP724G	IRF42 MOSFET with 60V, 0.028ohm
KP724A	MTP6N60 MOSFET with 600V, 1.2ohm
KP724B	IRF842 MOSFET with 600V, 1.2ohm
KP725A	TPF450 MOSFET with 500V, 0.4ohm
KP726A	BUZ90 MOSFET with 600 V, 1.2 ohm
KP728A	MOSFET with 800V, 3.0 ohm
KP801	field-effect transistors with a pn junction for use in the output stages of amplifiers of sound reproducing equipment
KP802	field-effect transistors pn junction work in key circuits of DC-DC converters as a high-speed switch
KP803	insulated gate field effect transistors for secondary power supplies, switching and pulse devices, as well as for key stabilizers and voltage converters, amplifiers and generators
KP804	insulated gate field-effect transistors with n-channel for high-speed switching circuits
KP805	field-effect transistors with an insulated gate and n-channel for building secondary power supplies with a transformerless input operating from an industrial AC network with a frequency of 50 Hz and a voltage of 220 V and for other devices for converting electrical energy
KP809	MOS transistors for operation at frequencies up to 3 MHz and higher in switching power supplies with a transformerless input, in regulators, stabilizers and converters
KP810	device with static induction for use in circuits of high-frequency power supplies with a transformerless input, key power amplifiers
KP812	field-effect transistors with insulated gate and n-channel for switching power supplies, regulators, audio frequency amplifiers
KP813	MOS transistors for operation at frequencies up to 3 MHz and higher in switching power supplies with a transformerless input, in regulators, stabilizers and converters
KP814	FETs with insulated gate and n-channel for switching power supplies
KP901	field-effect transistors with an insulated gate are designed for use in amplifying and generator stages in the range of short and ultrashort wavelengths (up to 100 MHz)
KP902	field-effect transistors with an insulated gate for use in receiving and transmitting devices in the frequency range up to 400 MHz
KP903	field-effect transistors with a pn junction for use in receiving-transmitting and switching devices in the frequency range up to 30 MHz
KP904	field-effect transistors with an insulated gate are designed for use in amplifying, converting and generator stages in the range of short and ultrashort wavelengths
KP905	insulated gate field effect transistors for amplifying and generating signals in the frequency range up to 1500 MHz
KP907	Insulated gate field-effect transistors for amplifying and generating signals up to 1500 MHz and for fast switching applications in the nanosecond range
KP908	Insulated gate field effect transistors for amplifying and generating signals in the frequency range up to 2.25 GHz
KP909	field-effect transistors with an insulated gate for operation in amplifying and generator devices in continuous and pulsed modes at frequencies up to 400 MHz
AP910-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel for operation in power amplifiers, generators, in the frequency range up to 8 GHz
KP911	field-effect transistors with an insulated gate for operation in amplifying and generator devices
KP912	insulated gate field effect transistors for use in key voltage stabilizers and converters, pulse devices, amplifiers and generators
KP913	Insulated gate field effect transistors for amplifying and generating signals in the frequency range up to 400 MHz at supply voltages up to 45 V
2P914	field-effect transistor with pn junction d for use in amplifiers, converters and high-frequency generators, as well as in switching devices
3P915-2	arsenidogallium field-effect transistors with a Schottky barrier and n-channel for operation in power amplifiers, generators, in the frequency range up to 8 GHz
KP918	insulated gate field effect transistors for amplifying and generating signals up to 1 GHz and for high-speed switching devices
KP920	Insulated gate field effect transistors for amplifying and generating signals up to 400 MHz and for fast switching applications
KP921	insulated gate field-effect transistors, designed for high-speed switching applications
2P922 2P922-1	field-effect transistors with an insulated gate and n-channel, designed for use in secondary power supplies, high-speed switching and pulse devices, as well as in stabilizers and voltage converters
KP923	field-effect transistors with an insulated gate for operation in amplifying and generator devices, in linear amplifying devices at frequencies up to 1 GHz
3P925-2	gallium arsenide field-effect transistors with a Schottky barrier and an n-channel for operation in broadband power amplifiers in the frequency range of 3.7-4.2 GHz (3P925A) and 4.3-4.8 GHz (3P925B) in a path with a characteristic impedance of 50 Ω and contains internal matching circuits
2P926	field-effect transistors for secondary power supplies, switching and pulse devices, as well as for key and linear devices
3P927	arsenidogallium field-effect transistors with a Schottky barrier with an n-channel for operation in power amplifiers, self-oscillators, frequency converters in the frequency range of 1-18 GHz
2P928	two MOS transistors with n-channel and common source, generator, designed for use in power amplifiers and generators
3P930	arsenidogallium field-effect transistors with a Schottky barrier and an n-channel for operation in the frequency range of 5.7-6.3 GHz
KP932	high-voltage transistor for operation in cascades of color display video amplifiers
KP933	two MIS transistors with an n-channel and a common source for operation in linear and broadband amplifying devices and self-oscillators with high frequency stability (for amplifying and generating signals with a frequency of up to 1 GHz)
KP934	transistors with static induction and n-channel designed for use in secondary power supplies and in high-voltage key devices
KP937	switching field-effect transistors with a pn junction and an n-channel for use in secondary power supplies, voltage converters, electric drive systems, pulse generators of electrospark processing complexes
KP938	switching high-voltage field-effect transistors with pn junction and n-channel for use in secondary power supplies, for powering DC and AC motors, in powerful switches, low-frequency amplifiers
2P941	for generating signals and amplifying power in electronic circuits with an operating frequency of up to 400-600 MHz at a supply voltage of 12 V
KP944	MIS transistor with a p-channel for operation in control circuits of computer storage devices on magnetic disks
KP944	MIS transistor with n-channel for operation in control circuits of computer storage devices on magnetic disks
KP946	device with static induction for use in circuits of high-frequency power supplies with a transformerless input, key power amplifiers
KP948	device with static induction for use in circuits of high-frequency power supplies with a transformerless input, key power amplifiers
KP953	device with static induction for use in circuits of high-frequency power supplies with a transformerless input, key power amplifiers
KP955	device with static induction for use in circuits of high-frequency power supplies with a transformerless input, key power amplifiers

Publication: cxem.net

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