Schottky diodes of the KDSh2964 series. Reference data
Encyclopedia of radio electronics and electrical engineering / Reference materials
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Powerful silicon rectifier diodes with a Schottky barrier KDSh2964A, KDSh2964B are manufactured using planar epitaxial technology. They are designed for use in switching power supplies and other equipment for a wide range of applications. The diodes are packaged in a plastic case KT-28-1 (TO-220AS) with rigid stamped tinned leads (Fig. 1). The mass of the device is no more than 2,5 g. The pinout of the diodes is indicated in the same fig. 1.
Foreign analogue of KDSh2964A - 12TQ060, KDSh2964B-12TQ045.
Main electrical parameters at Тkorp = 25 °С
- Constant reverse current of the diode, mA, not more than, for KDSh2964A (with a reverse voltage of 60 V) ..... 0 8
- KDSh2964B (45 V) ..... 1,75
- Constant forward voltage of the diode, V, not more, at a direct current of 15 A, pulse duration not more than 300 μs and duty cycle not less than 100 for KDSh2964A ..... 0,62
- KDSh2964B ..... 0,56
- Constant forward voltage of the diode, V, not more, at a direct current of 30 A, pulse duration not more than 300 μs and duty cycle not less than 100 for KDSh2964A ..... 0,82
- KDSh2964B ..... 0,71
- Diode breakdown reverse voltage, V, not more, at reverse current 10 mA for KDSh2964A.....60
- KDSh2964B ..... 45
- Total capacitance of the diode, pF, no more than ..... 900
- Thermal resistance transition-housing, °С/W, max.....2
Limit values
- The highest constant reverse voltage of the diode, V, for KDSh2964A ..... 60
- KDSh2964B ..... 45
- The highest average forward current of the diode, A, at a case temperature of not more than 120 ° C ..... 15
- The highest repetitive pulse forward current of the diode, A, with a duty cycle of at least 2 and a case temperature of not more than 120 ° C..... 15
- The largest non-repeating pulse forward current of the diode, A, with a pulse duration of not more than 10 ms for KDSh2964A ..... 220
- KDSh2964B ..... 250
- The highest transition temperature, ° С..... 150
- Working range of ambient temperature, °С.....-45...+125
Permissible value of static potential - 200 V (III degree of rigidity according to OST 11 073.062).
On fig. 2 shows typical dependences of the constant reverse current of the diodes on the constant reverse voltage at two values of the case temperature, and in fig. 3 - direct direct voltage from direct current at the same case temperatures.
On fig. 4 shows a typical dependence of the total diode capacitance on the constant reverse voltage at a frequency of 1 MHz.
Author: V.Kiselev, Minsk
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