Transistor assemblies of the KT222 series. Reference data

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Transistor assemblies of the KT222 series. Reference data

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Matched pairs of silicon n-p-n transistors KT222AS-KT222VS are intended for use in electronic equipment for a wide range of applications, in particular, for building differential amplifiers. The assembly is made in a rectangular plastic case 2101.8-1 (DIP-8), hard tinned leads (see figure). Weight - no more than 1 g. The closest foreign analogue is DI4044 from DIONICS Inc.

Transistor assemblies of the KT222 series

Assembly pinout: conclusions 1, 2 and 3 - collector, base and emitter of the first transistor, respectively; conclusions 5, 6 and 7 - emitter, base, collector of the second transistor; pins 4 and 8 are free.

Technologically, the assembly is made on a single chip with dielectric insulation of elements, which provides close values of the main parameters (static current transfer coefficient, base-emitter voltage drop) at a collector current from 10 μA to 1 mA and over the entire operating temperature range. At the same time, the assembly transistors have a small mutual capacitance.

Main Electrical Specifications*

Difference between voltage values of the base-emitter of transistors, V, not more, at a collector current of 10 μA and a collector-emitter voltage of 5 V.....3
The ratio of the values of the static current transfer coefficient of the base of transistors at a collector current of 10 μA and a collector-emitter voltage of 5 V for KT222AC ..... 0,8 ... 1,25
KT222BS.....0,9...1,11
KT222VS.....0,95...1,05
Collector junction reverse current, nA, no more, at junction voltage 45 V and ambient temperature 25 °С.....1
70 °C.....50
Reverse current of the emitter junction, nA, no more, at a voltage at the junction of 5 V.....1
Static base current transfer coefficient, not less than, at collector-emitter voltage of 5 V and collector current of 10 μA.....200
1 mA.....225
Capacitance between the collectors of transistors, pF, no more, with a difference in voltage values on the collector of transistors 5V ..... 0,8
Limiting frequency, MHz, not less, at collector current 1 mA and collector-emitter voltage 10V.....200

*At 25°C ambient unless otherwise noted.

Operating limits

The highest reverse voltage of the collector junction at a collector current of 10 μA ..... 60
The highest collector-emitter reverse voltage, V, at a collector current of 1 mA ..... 60
The highest reverse voltage of the emitter junction, V, at an emitter current of 10 μA ..... 7
The highest DC collector current, mA ..... 1,5
The largest difference in voltage values on the collector of transistors, V ..... 100
Working range of ambient temperature, °С.....-10...+70

Author: S.Konovalov, Bryansk

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