Field-effect transistors of the KP723 series. Reference data

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Field-effect transistors of the KP723 series. Reference data

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Powerful silicon field-effect n-channel transistors KP723A-KP723G with an insulated gate, channel enrichment and a built-in protective reverse diode are manufactured using planar epitaxial technology. They are designed to work in secondary power supplies, power regulators, stabilizers and voltage converters with continuous and pulse control, in uninterruptible power supplies for personal computers, in electric motor drive devices and other units and blocks of equipment for wide application.

The devices are designed in a plastic case KT-28 (according to foreign classification - TO-220) with hard stamped tinned leads; weight of the device - no more than 2,5 g.

Foreign functional analogues of transistors KP723A - IRFZ44, KP723B - IRFZ45, KP723V - IRFZ40, KP723G - IRLZ44.

The KP723 and KP727 series transistors are similar in case design, electrical circuit of internal connections and pinout.

Main technical characteristics at Tamb.av = 25 °С

Threshold voltage, V, at a drain current of 0,25 mA and connected gate and drain for KP723A - KP723V ...... 2...4
KP723G......1...2
Drain current, A, not less, with a pulse duration of not more than 300 μs and a duty cycle of at least 50 for KP723A and KP723V at a drain-source voltage of 1,75 V and a gate-source voltage of 10 V, for KP723B at a drain-source voltage of 2,25 V and gate-source 10 V, for KP723G at a drain-source voltage of 1,75 V and gate-source 5 V ...... 50
Channel resistance of an open transistor, Ohm, no more, with a pulse duration of not more than 300 μs, a duty cycle of at least 50 and a drain current of 31 A for KP723A, KP723V (at a gate-source voltage of 10 V)...... 0,028
KP723B(10V)......0,035
KP723G (5 V) ...... 0,028
Residual drain current, μA, no more, at the maximum allowable drain-source voltage and zero gate-source voltage ...... 250
Gate leakage current, nA, no more, with a pulse duration of not more than 300 μs, a duty cycle of at least 50 and zero drain-source voltage for KP723A - KP723V at a gate-source voltage of ±20 V, for KP723G at a gate-source voltage of ±10 V ......100
The slope of the characteristic, A / V, not less, with a pulse duration of not more than 300 μs, a duty cycle of at least 50, a drain-source voltage of 25 V, a drain current of 31 A for KP723A-KP723V ...... 15
KP723G......23
Thermal resistance, °C/W, no more, transition - case......1
transition - environment ...... 62
Turn-on time, no, no more, at a drain-source voltage of 30 V, a drain current of 51 A for KP723A-KP723V (with an output resistance of the signal source of 9,1 Ohm and a gate-source voltage of 10 V)...... 130
KP723G (4,6 Ohm, 5 V)......247
Turn-off time, no, no more, at a drain-source voltage of 30 V, a drain current of 51 A for KP723A-KP723V (with an output impedance of the signal source of 9,1 Ohm and a gate-source voltage of 10 V)...... 150
KP723G (4,6 Ohm, 5 V)......152
Input capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz for KP723A-KP723V......2500
KP723G......4300
Output capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz for KP723A-KP723V......1200
KP723G......1600
Capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz ...... 290
Forward voltage of the protective diode, V, not more, with a pulse duration of not more than 300 μs, a duty cycle of at least 50, zero gate-source voltage and drain current ** 51 A......2,5

Limit values

Maximum drain-source voltage, V, for KP723A, KP723B, KP723G ..... 60
KP723V......50
Maximum gate-source voltage, V, for KP723A-KP723V......±20
KP723G......±10
The highest direct drain current, A, at a case temperature of 25 ° C ...... 50
The highest pulsed drain current, A, at a case temperature of 25 ° C ...... 200
The highest continuous power dissipation, W, with a heat sink, at a case temperature of 25°C......150
The highest transition temperature, ° С ...... 175
Ambient temperature operating range, °С -60...+125

Permissible value of static potential - 200 V (III degree of rigidity according to OSP 1073.062).

The operating mode and conditions for mounting transistors in equipment must comply with OSP 1336.907.0. Operation with two or more maximum permissible values of parameters is not allowed. To improve reliability and durability, it is recommended to use transistors in modes where the parameter values do not exceed 70% of the limit values.

During installation, one-time bending of leads with a radius of curvature of at least 1,5 mm is allowed at a distance not closer than 5 mm from the body, and only in a plane perpendicular to the plane of the leads and passing along the bent lead. Twisting leads is not allowed.

The distance from the body to the place of tinning and soldering should not be less than 5 mm. Soldering temperature - no more than 265°С. The tinning time should not exceed 2 s, and the soldering time - 4 s.

To improve heat transfer from the transistor flange to the heat sink, it is recommended to use heat-conducting lubricants and pastes, for example, KPT-8 according to GOST 19783. If it is necessary to install an insulating gasket under the transistor, its thermal resistance must be taken into account.

On fig. 1-8 shows typical graphical dependences of the parameters of transistors of the KP723 series. The families of output characteristics of devices at two values of case temperature are shown in fig. 1 and 2, and in Fig. 3 and 4 - their transfer characteristics.

Field-effect transistors of the KP723 series

The normalized dependences of the open channel resistance on the junction temperature are shown in Figs. 5, and in fig. 6 - dependences of the input, output and throughput capacitance on the drain-source voltage. Rice. 7, a and b illustrates the change in current through the drain output of the transistor from the voltage applied to the channel outputs in polarity, which opens the protective diode of the device.

On fig. 8 shows the temperature dependences of the limiting drain current.

Author: V. Kiselev, Minsk, Belarus

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