Thyristor switches of the KR1125KP2 and KR1125KPZ series. Reference data

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Microcircuits KR1125KPZA - KR1125KPZV are complementary pairs of transistor analogs of dinistors, designed in one package. They are designed to work in equipment for phase control of AC power and other pulse devices (ignition units of powerful gas-discharge lamps, self-generators of sawtooth pulses, etc.). Foreign analogue - BR100/03.

The devices are made on a chip with dimensions of 1,2x1,2 mm using planar-diffusion technology with p-n junction insulation. Housing - plastic, KT-26 (Fig. 1); weight - no more than 0,3 g. There is also a design version of the unpackaged version of the switch.

The switch circuit and its pinout are shown in fig. 2.

The device consists of two identical transistor analogues of a dinistor, connected in anti-series and mounted in a common housing. The zener diode circuits VD1-VD3 and VD5-VD7 set the opening voltage of the dinistors. So, in the switch KR1125KPZA in these circuits, one zener diode is included, in KR1125KPZB - two, in KR1125KPZV - three.

The volt-ampere characteristic of the device is shown in fig. 3. It is easy to see that it is symmetrical about zero coordinates. The VD4R3 and VD8R7 circuits ensure the anode current flows through the device, bypassing the corresponding analog of the dinistor with a reverse voltage on it. Resistors R3, R4 and R7, R8 allow you to use an analogue of a dinistor without an additional current-limiting resistor.

Main technical characteristics*

• Switching (opening) voltage, V, at temperatures of -60, 25 and 85°C for KR1125KPZA.....8,5±1
• KR1125KPZB......15±1
• KR1125KPZV......21 ±2
• Switching voltage temperature coefficient, mV/°С, max......2
• Constant voltage on an open dinistor, V, at a direct current of 50 mA and a temperature of 25 ° C ..... 1,2 ... 3,5 **
• Shoulder asymmetry in switching voltage, V, not more, at a temperature of 25°С......1
• Switching current, mA, no more, at temperatures of 25 and 85°C......0,15
• Dinistor holding current in the open state, mA, no more, at a temperature of -10...+85°С......1
• Turn-on time, no, no more, with a current-limiting resistor of 1 kOhm and a temperature of 25 ° C ...... 80

Operating limits

• Voltage rise rate on closed dinistor, V/µs, not more, at temperature -60...+85°С ... .0,1
• Repetitive pulsed current of an open dinistor, A, at a pulse repetition rate of not more than 50 Hz, the capacity of the storage capacitor in the anode circuit is not more than 1 μF, the resistance of the measuring resistor is 1 Ohm and at a temperature of -60 ... + 85 ° С...... 0,6...3
• The highest power dissipation of an open dinistor, W, at a temperature of -60 ... + 50 ° С ...... 250
• +85°C......20
• The highest allowable static voltage, kV ...... 2
• Operating temperature range, °С......-60...+85

Both dinistors of the device can be used both in pairs and independently of each other. In this case, the value of the repetitive pulsed current of an open dinistor must be reduced to 0,25 ... 1,2 A, and the switching voltage decreases for KR1125KPZA to 7 ... 9 V, for KR1125KPZB - to 13,5 ... 15,5 V and for KR1125KPZV - up to 18,5 ... 22,5 V. The reverse voltage of each of the dinistors is 1,5 V with a reverse current of 10 mA.

Dinistor switches of the KR1125KPZ series are capable of operating as pulse shapers, subject to the specified operating conditions. The pulse repetition rate determines the allowable rate of rise of the anode voltage.

When operating the microcircuit in the temperature range of -60 ... + 60 ° С, it is allowed to increase the rate of voltage rise on a closed dinistor to 1 V / μs.

The microcircuits are suitable for mounting on a printed circuit board using the group soldering method. With manual installation, the temperature of the soldering iron should not exceed 265 ° C, and the soldering time should not exceed 4 s. Permissible number of solderings - 2. The place of soldering should not be closer than 3 mm from the edge of the body. The terminals can be bent once at an angle up to 90 degrees, with a bending radius of at least 2,2 mm. The bending point should not be closer than three millimeters from the body; the bending force must not be transmitted to the housing.

On fig. 4, 5 and 6 show typical temperature dependences of the holding current of the dinistor in the open state, the switching current and the ratio of the holding current to the switching current, respectively.

The diagram of a phase power regulator with a microcircuit from the KR1125KPZ series in the trinistor control unit is shown in fig. 7.

The device uses only one arm of the VS2 dynistor switch. Capacitor C1 - storage, resistor R3 - power control. Resistor R2 limits the current through the control circuit in the upper position of the resistor R3 slider according to the diagram; resistor R1 - mode, designed to ensure accurate operation of the trinistor VS1 at an elevated temperature of its case. The VS2 dinistor switch acts as a trigger element. Diode VD1 provides power control limits from 50 to 100%.

On fig. 8 shows a diagram of a similar power controller assembled on a triac VS1. Here, the VS2 dynistor switch generates bipolar control pulses - both switch arms are used.

The KR1125KP2 microcircuit differs from the KR1125KPZ mainly in that it is not a two-arm, but a one-arm switch. The case is the same, but the pinout is different (Fig. 9); weight - no more than 0,3 g. Foreign analogue - 4E20-28.

Since there is only one analogue of a dinistor in the KR1125KP2 switch, its current-voltage characteristic is asymmetric (Fig. 10).

Main Specifications

• Switching (opening) voltage, V, at temperatures of -60, 25 and 85°С......21 ±3
• Switching voltage temperature coefficient, mV/°С, max......2
• Constant voltage on an open dinistor, V, at a direct current of 50 mA and a temperature of 25 ° C ...... 1,2 ... 3,5 *
• Switching current, mA, no more, at a temperature of 25 and 85°С......0,13
• Holding current of the dinistor in the open state, mA, no more, at a temperature of 25°С......3
• 85°С......0,5
• Turn-on time, no, no more, with a current-limiting resistor of 1 kOhm and a temperature of 25 ° C ...... 80

* Excluding internal resistance - no more than 1 V.

Operating limits

• Voltage rise rate on closed dinistor, V/µs, not more, at temperature -60...+85°С ... .0,1
• Repetitive pulsed current of an open dinistor, A, at a pulse repetition rate of not more than 50 Hz, a storage capacitor capacitance of 1 μF, a measuring resistor of 1 Ohm and a temperature of -60 ... + 85 ° С ..... 0,25.-1,2 .XNUMX
• The highest power dissipation of an open dinistor, W, at a temperature of -60 ... + 50 ° С ...... 250
• +85°C......20
• Operating temperature range, °С......-60...+85

On fig. 11 shows a typical temperature dependence of the dinistor switching current, and in fig. 12 - the ratio of its holding current to the switching current.

A typical circuit for connecting the KR1125KP2 microcircuit to a trinistor power regulator is similar to that shown in fig. 7. In fig. 13 shows a diagram of a pulsed ignition device for high-intensity gas-discharge street light sources.

Here L1 and T1 are standard ballast choke and pulse transformer.

Author: A.Nefedov, Moscow

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