Power diodes. Scheme, description

ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING
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Power semiconductor devices. Power diodes. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Electrician's Handbook

Diodes are not only single components, they can be used in modules. Often diodes are an integral part of transistor modules. Types of typical diode modules are shown in fig. 7.7.

Power diodes
Rice. 7.7. Typical diode modules: a - double module; b- diode bridge; c - three-phase bridge; d - double diode-transistor module

General purpose diodes have the following features:

have a relatively long recovery time (25 ns);
used in low-frequency devices (1 kHz);
have a high current level (1-10000 A);
have a high voltage level (50-5000 V);
usually manufactured using a diffusion process.

Fast Diodes have the following features:

have a small (low) recovery time (less than 5 ns);
are used both in switching power supplies and in inverter circuits;
have a sufficiently high current level (1-3000 A);
have a sufficiently high voltage level (50-2000 V);
for a voltage level of about 400 V, these diodes use an epitaxial substrate for faster switching, with a recovery time of 50 ns.

Schottky diodes have the following features:

the barrier potential created in the silicon-metal junction of the anode eliminates the problem of charge accumulation; the metal layer is deposited on the thin epitaxial N layer;
there are no minority carriers, so the recombination time is zero, and the switching process depends only on the majority carriers;
the recovery time is affected by the capacitance of the silicon-metal junction;
have a relatively low forward voltage drop due to the level of impurity concentration, this implies a barrier potential (0,2-0,9 V);
higher leakage current (up to 100 mA);
low current level (1-300 A);
low voltage level (<100 V).

Zener Power Diodes (Semiconductor Zener Diodes) have the following features:

heavily doped and designed to work in the field of avalanche breakdown;
continuous power has an average value (250 mW - 75 W);
can be used to suppress interference as a limiter, while absorbing up to 50 kW in a pulse.

Author: Koryakin-Chernyak S.L.

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