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Electronic ballasts on discrete elements. Technical parameters of BMT used in electronic ballasts. Fundamentals of circuitry. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Ballasts for fluorescent lamps

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The technology for the production of efficient bipolar power transistors (BMT) was developed several years ago by MOTOROLA and was called H2BIP (High Gain, High Frequency Bipolar Transistors).

Note. The essence of this new technology is that on the same semiconductor structure, in addition to the main high-voltage BMT, an active undersaturation circuit of this transistor and an integrated anti-parallel diode between its collector and emitter are created.

BMTs created using this technology are characterized by the best combinations of static, dynamic and energy indicators among bipolar transistors, while they have an insignificant (no more than ±0,15 μs) spread in the dispersal time ts. Devices of this series such as BUL45D2, BUL38D, BUL39D, MJE18004D2 and popular MJE13003, MJE13005, MJE13007, MJE13009 are successfully used in electronic ballasts (which are currently promising mass-market products).

BMT type MJE13003, MJE13005, MJE13007, MJE13009 are produced by many manufacturers, so instead of MJE there may be designations ST, RNE, KSE, HA, MJF, etc.

In table. 3.11 shows the technical parameters of the BMT most commonly used in electronic ballasts.

Circuit Features

A comparative analysis of the modes of the output keys of a typical electronic ballast, assembled according to a half-bridge circuit and controlling the operation of two fluorescent lamps with a power of 36-40 W each at a switching frequency of 30-50 kHz, shows that the level of total power losses on the keys when using BMT type BUL45D2, also , like MOTOROLA's MJE13005, is a very small value (about 0,5 W per transistor).

Approximately the same indicators are obtained when using in these units domestic BMT types KT8136A and KT8181A manufactured by OAO ELEKTRONPRIBOR (ZAO FZMT, Fryazino). In the case of use in such ballasts equivalent in current and voltage

Table 3.11. Technical parameters of BMT used in electronic ballasts

Technical parameters of BMT used in electronic ballasts. Circuitry Fundamentals

MOSFET type IRF830 or "ultrafast" IGBT type IRGB410U from IR, the level of power loss on these MTs is 1,5-2 times higher (0,8-1,0 W per transistor).

BMT is also noticeably cheaper than its competing prototypes, which is fundamentally important for obtaining a small final price of electronic ballasts, since they are aimed at replacing inefficient but cheap electromechanical ballasts (chokes with a starter) currently used in lighting engineering in lamps with LL.

Author: Koryakin-Chernyak S.L.

See other articles Section Ballasts for fluorescent lamps.

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