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Electronic ballasts on discrete elements. Advantages. Questions of terminology. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Ballasts for fluorescent lamps

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Advantages

In inexpensive electronic ballasts, circuits of a half-bridge self-oscillating inverter (with self-excitation) implemented on discrete elements are almost universally used. Virtue such electronic ballasts is their low cost. As power switches, most often not field-effect, but special bipolar transistors are used here (abbreviated as BMT - bipolar powerful transistors).

Terminology issues

In foreign technical literature to refer to transistors of various types abbreviations are used:

  • IGBT (Insulated Gate Bipolar Transistor);
  • MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor);
  • BJT (Bipolar Junction Transistor);
  • BPT (Bipolar Power Transistor). Corresponding domestic analogues:
  • IGBT (insulated gate bipolar transistor);
  • MY PT (field-effect transistors of the metal-oxide-semiconductor structure);
  • BT (bipolar transistors);
  • BMT (bipolar powerful transistors).

Author: Koryakin-Chernyak S.L.

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