Diode assembly KD638AS. Encyclopedia of radio electronics and electrical engineering
Encyclopedia of radio electronics and electrical engineering / Reference materials
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The assembly of high-power silicon diodes KD638AS is made using epitaxial-planar technology. The assembly is composed of two diodes having a common cathode terminal. The device is intended for use in switching power supplies and other equipment units of wide application.
The diode assembly is framed in a plastic case KT-28 with rigid plate leads (Fig. 1), the mass of the device is no more than 2.5 g. The foreign analogue is BYV16-200T.
Main technical data at Tav.av.= 25°C (for one diode)
| Constant reverse diode current at reverse voltage 200V, no more |
5 μA |
| Constant forward voltage of the diode at direct current 8A, no more |
In 1.25 |
| Diode reverse recovery time at forward current 1A, reverse voltage 30V, forward current decrease rate 50A/µs and reverse current equal to 0.25 of its maximum value, no more |
35 ns |
| Thermal resistance, transition-housing for the assembly as a whole, no more |
1.3 °C/W |
Limit values
| The highest constant reverse voltage of the diode |
In 200 |
| The largest average forward current of the diode with simultaneous operation of the second diode in the same mode |
A 8 |
| Highest junction temperature |
150 °C |
| Limits of the operating range of the ambient temperature |
-60 ... + 100 °C |
| Permissible value of static potential* |
In 500 |
|
| *IV degree of rigidity according to OST 11073.062 |
It is not allowed to operate diodes at the limit values of two or more parameters. When mounting the assembly on the board, no more than two times bending of the leads is allowed at a distance of at least 5 mm from the edge of the case at an angle of 90 degrees. with a radius of curvature of at least 1.5 mm (it is not allowed to bend the terminals in the plane of the body). In this case, it is necessary to take measures that exclude the transfer of force to the body.
The distance from the housing to the place of tinning and soldering of the leads must not be less than 5 mm. The allowable number of resoldering of the assembly leads during installation and adjustment operations is three.
In order to reduce the thermal resistance of the housing-heat sink, it is recommended to use a heat-conducting paste, for example, KPT-8 (GOST 19783). Do not solder the assembly's heat sink plate to the heat sink. If it is necessary to isolate the assembly from the heatsink, the increase in junction-heatsink thermal resistance caused by the insulating pad (or paste) must be taken into account.
Graphic dependences of the parameters of the KD638AS diode assembly are shown in Fig. 2-5. Figure 2 shows the dependences of the DC reverse current on the DC reverse voltage, and Figure 3 shows the current-voltage characteristics at various case temperatures. The dependence of the diode capacitance on the constant reverse voltage is shown in Fig. 4, and the temperature dependence of the breakdown voltage is shown in Fig. 5.
Publication: N. Bolshakov, rf.atnn.ru
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