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Automatic systems and devices with stepper motors. Ismailov Sh.Yu., 1968

Automatic electronic tour guide

Autonomous inverters based on thyristors with switching capacitors separated from the load., 1968

Power units for electrostatic precipitators. Aliev G.M.A., Gonik A.E., 1968

Analogue computers with sequential execution of operations (application for solving problems of mathematical physics). Vitenberg I.M., Tankelevich R.L., 1968

Antiseptic treatment of power transmission line poles. Valk H.Ya., 1968

Proximity switches and scaling circuits on thyristors. Auen L.F., 1968

Transformerless low-frequency amplifiers based on transistors

Bionics. Kraizmer L.P., Sochivko V.P., 1968

PTC blocks on transistors. Shor K.G., 1968

valve cascades. Parfenov E.E., Prozorov V.A., 1968

Exciter SSB

Choice of circuits of transistor receivers. Gumelya E.B., 1968

High quality amateur low frequency amplifiers. Gendin G.S., 1968

High frequency magnetic materials. Tolmassky I.S., 1968

Output transformers. Directory. Malinin R.M., 1968

Noise generation for the study of automatic systems. Zhovinsky V.N., 1968

Long range television reception. Sotnikov S.K., 1968

Discrete multichannel systems for inputting information into computers. Ovchinnikov V.N., 1968

Radio amateur's yearbook. Krenkel E.T. (ed.), 1968

Capacitive frequency converters. Kazarnovsky D.M., 1968

Measuring devices with high-temperature transformer displacement sensors. Seredenin V.I., 1968

Humidity indicator

Inductive-frequency converters of non-electric quantities. Goldman V.S., Sakharov Yu.I., 1968

Information robots and manipulators. Katys G.P., 1968

Information characteristics of measuring and control instruments. Rabinovich V.I., Tsapenko M.P., 1968

Testing of magnetic elements of automatic devices. Ikonnikov S.N., 1968

Testing of equipment of electrical installations. Bazhanov S.A., 1968

Personnel scanning on transistors. Tikhomirov V.S., 1968

How to determine the malfunction of an asynchronous motor. Rivlin L.B., 1968

How to build radio equipment. Johnson R., 1968

How to read schemes of general industrial installations. Chernyak A.A., 1968

Pocket radio

Coding information of control programs. Vulfson I.A., 1968

Complete capacitor units. Ilyashov V.P., 1968

Compressor installations of power plants and substations. Lauer S.G., Ustinov V.F., 1968

Tape drives for portable tape recorders. Kruglikov D.A., 1968

Logical elements on thyratrons. Sevumyan Yu.R., 1968

Amateur polyphonic electric musical instrument

Magnetic tape. Mazo Ya.A., 1968

Magnetic modulation angle-to-code converters, 1968

Magnetic integrating circuits of computer technology and automation. Mochalov V.D., 1968

Small size superheterodyne radio receiver

Low power power transformers. Nikitsky V.Z., 1968

Mathematical continuous logic of representation of functions. Ginzburg S.A., 1968

Mathematical modeling of heat conduction type equations with discontinuous coefficients. Zherebyatiev I.F., Lukyanov A.T., 1968

Methods for reducing the influence of interference in thermometric circuits. Sereznov A.N., Tsapenko M.P., 1968

Multi-winding potentiometers. Grinberg L.S., 1968

Installation of indoor switchgear 6-10 kV. Ievlev V.I., Karyagin A.G., 1968

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Latest news of science and technology, new electronics:

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Random news from the Archive

MDM diodes 19.09.2013

Thanks to research at the Oregon State University College of Engineering, MDM (metal-dielectric-metal) diodes are one step closer to being used in real devices. Three years ago, the university announced the first successful high-speed MDM diode and continues to be a world leader in this technology.

MDM-type diodes (MIM - metal-insulator-metal) are a "sandwich" of two metals with two dielectrics between them. This allows electrons to tunnel through the dielectrics and emerge almost instantly from the other side. Now researchers have found that adding a second dielectric allows for "stepping tunneling" - a situation in which an electron can only tunnel through one dielectric, rather than two. This, in turn, allows precise control of asymmetry, diode non-linearity, and rectification at low voltages.

"This approach allows us to improve device performance by creating additional tunneling barrier asymmetry," said University professor John Conley. "This gives us another way to organize quantum mechanical tunneling and brings us closer to the real devices that will become possible with this technology." .

MDM devices consist of four layers (from left to right): amorphous zirconium, hafnium oxide, alumina, and aluminium. The image was obtained using a transmission electron microscope.

“Thanks to MDM diodes, more complex microelectronic devices become possible,” the scientists say, “not only improved liquid crystal displays, mobile phones and televisions, but also devices such as extremely fast computers that do not depend on transistors, or infrared radiation “energy storage” - as a way to produce energy from the cooling of the Earth during the night."

"MDM diodes are faster devices than silicon chips and can be produced on a huge scale at low cost from inexpensive and environmentally friendly materials," the university says.

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