Field-effect transistors of the KP727 series. Reference data

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Field-effect transistors of the KP727 series. Reference data

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Powerful silicon field-effect transistors KP727A and KP727B with an insulated gate enriched with an n-channel and a built-in reverse-connected protective diode are manufactured using planar epitaxial technology. They are designed to work in secondary power supplies, in regulators, stabilizers and voltage and current converters with continuous and pulse control, in electric motor drive units and other devices of equipment for wide application.

The transistors are housed in a plastic case KT-28 (TO-220) with stamped hard tinned leads and a heat-removing metal flange with a mounting hole (Fig. 1). The mass of the device is no more than 2,5 g. Foreign analogues of transistors: KP727A - BUZ71, KP727B - IRFZ34.

Field-effect transistors of the KP727 series

Main characteristics at Tacr.av = 25°C

Threshold gate-source voltage, V, at a drain current of 0,25 mA and the same gate-source and drain-source voltages for KP727A......2,1...4
KP727B......2...4
Drain pulse current, A, not less, with a pulse duration of less than 300 μs and a duty cycle of more than 50, at a gate-source voltage of 10 V for KP727A (drain-source voltage 2V)...... 14
KP727B(1,8V)......30
Drain-source resistance of an open transistor, Ohm, no more, with a pulse duration of less than 300 μs and a duty cycle of more than 50, at a gate-source voltage of 10 V for KP727A (drain current 9 A)...... 0,1
KP727B(18A)......0,05
Residual drain current, µA, no more, at maximum drain-source voltage and zero gate-source voltage ...... 25
Gate leakage current, µA, no more, at gate-source voltage +20 V and zero drain-source voltage ...... ± 0,1
The slope of the characteristic, A / V, not less, with a pulse duration of less than 300 μs and a duty cycle of more than 50, at a drain-source voltage of 25 V for KP727A (drain current 9 A)...... 4
KP727B(18A)......9,3
Constant forward voltage on an open protective diode, V, not more, with a pulse duration of less than 300 μs and a duty cycle of more than 50, at zero gate-source voltage for KP727A (current through the diode 28 A)...... 1,8
KP727B(30A)......1,6
Thermal resistance transition-housing, °C/W max, for KP727A......3,1
KP727B ...... 1,7
Thermal resistance transition - environment, °C / W, no more ...... 62
Turn-on time*, µs, no more, at a drain-source voltage of 30 V, a drain current of 30 A and an output resistance of the measuring signal source of 9,1 Ohm.....0,14
Turn-off time*, µs, no more, at a drain-source voltage of 30 V, a drain current of 30 A and an output resistance of the measuring signal source of 9,1 Ohm ...... 0,12
Input capacitance*, pF, no more, at zero gate-source voltage and drain-source voltage of 25 V at a frequency of 1 MHz ...... 1600
Output capacitance*, pF, no more, at zero gate-source voltage and drain-source voltage of 25 V at a frequency of 1 MHz ...... 800
Capacitance*, pF, no more, at zero gate-source voltage and drain-source voltage of 25 V at a frequency of 1 MHz ..... 195

* Reference parameters.

Operating limits

The highest drain-source voltage, V, for KP727A......50
KP727B ...... 60
Maximum gate-source voltage, V ...... ± 20
The highest direct drain current, A, at a case temperature of 25 ° C for KP727A ...... 14
KP727B ...... 30
The highest pulsed drain current, A, at a case temperature of 25 ° C for KP727A ...... 56
KP727B ...... 120
The highest constant dissipated power, W, at a case temperature of 25 ° C for KP727A......40
KP727B ...... 88
The highest value of the static potential, V.....200**
Operating temperature range, °С......-55...+150

** III degree of rigidity according to OST 11073.062.

Operation of transistors with two or more limit values of parameters is prohibited. To improve the reliability of the devices, the values of the parameters should not exceed 70% of the maximum allowable.

One-time bending of the leads is allowed no closer than 5 mm from the body with a bending radius of at least 1,5 mm, and the bend line must lie in the plane of the leads. When bending, measures must be taken to prevent the transfer of force to the body. Conclusions cannot be twisted.

The distance from the body to the place of soldering and tinning should not be less than 5 mm. Soldering temperature - not higher than 265°C, soldering time - no more than 4 s, tinning - 2 s.

To reduce the thermal resistance of the transistor case-heat sink, it is recommended to use special pastes, for example, KPT-8 according to GOST 19783. In cases where an insulating gasket should be under the case, its thermal resistance must be taken into account.

On fig. 2, a and b show typical dependences of the drain current of transistors on the drain-source voltage at normal case temperature, and in fig. 3, a and b - from the gate-source voltage at two values of the junction temperature.

Field-effect transistors of the KP727 series

On fig. 4 shows the normalized temperature dependence of the drain-source resistance of an open transistor (Rsi.t25 is the ratio of the current value of the drain-source resistance to the value of this resistance at a junction temperature of 25°C), and in fig. 5 - typical dependences of the input (C11i), output (C22i) and throughput (C12i) capacitance of transistors on the drain-source pulse voltage.

Field-effect transistors of the KP727 series

Rice. 6a and XNUMXb illustrate the dependence of the voltage at the terminals of the transistor channel on the current through these terminals, which flows in the direction forward for the protective diode. The main component of this voltage is the voltage drop across the open protective diode.

Field-effect transistors of the KP727 series

Author: V.Kiselev

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