Unijunction transistors of the KT133 series. Reference data

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Unijunction transistors of the KT133 series. Reference data

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Silicon unijunction transistors with n-base KT133A and KT133B are designed to work in time delay units, voltage converters, generators of electrical oscillations, thyristor control devices and others where an element with relay characteristics is required.

The devices are manufactured using epitaxial-planar technology. They are issued in a plastic case KT-26 (Fig. 1), the mass of the device is no more than 0,3 s. Foreign analogues of transistors KT133A, KT133B - 2N4870, 2N4871, respectively.

Unijunction transistors of the KT133 series

Main electrical characteristics at Tacr avg = 25°C

Leakage current of the emitter junction, μA, no more, at reverse voltage emitter-base2 30 V and zero current base1......1
Valley current, mA, not less than, at base1-base2 voltage of 20 V, resistor resistance in the emitter circuit of 100 Ohm, pulse duration of 6 µs or less with a duty cycle of 50 for
KT133A......2
KT133B......4
Transfer coefficient at voltage base1-base2 10 V for KT133A ...... 0,56 ... 0,75
KT133B......0,75...0,85
The highest generated frequency, Hz......220
Turn-on current*, µA, no more, at voltage base1-base2 25 V......5
Modulation current*, mA, at voltage base1-base2 10 V and emitter current 50 mA......15...65
Residual voltage*, V, at base1-base2 voltage 3 V and emitter current 50 mA......0,7...2,5
Interbase resistance*, kOhm, at voltage base1-base2 3 V and zero emitter current .....4...9,1
Temperature coefficient of interbase resistance*, %/°С, not more, at voltage base1-base2 3 V, zero emitter current and ambient temperature within -60...+125°С .0,1...0,9
Impulse voltage of the base 1*, V, not more, with a resistance of resistors in the circuits baey1 20 Ohm, base2 - 100 Ohm, emitter - 10 kOhm, capacitor capacitance in the emitter circuit 0,2 μF and voltage base1-base2 20 V for KT133A .. ....3
KT133B...........5
Thermal resistance transition-environment, °С/W, no more......333

* Reference parameters.

Limit values

The highest voltage base1-base2 (interbase voltage), V ...... 35
Maximum reverse voltage emitter-base2, V......30
The highest direct current of the emitter of an open transistor, mA......50
The highest pulsed emitter current, A. with a pulse duration of not more than 10 μs and a duty cycle of at least 100 ...... 1,5
The highest constant power dissipation, mW......300
The highest transition temperature, ° С ...... 135
Limits of ambient operating temperature, °С..... -60...+125

The input current-voltage characteristic of a unijunction transistor is shown in fig. 2. The turn-on current Ion of the device is usually called the value of the emitter current at which the transition from the closed state to the open occurs. The valley current Id is the value of the emitter current corresponding to the CVC point with the minimum voltage and zero differential resistance.

The leakage current of the emitter junction Iebo is the current through the emitter junction, reversely biased relative to the base2. Interbase resistance RB1B2 - resistance between the bases of the transistor at a given interbase voltage. The transfer coefficient r] is the ratio of the maximum possible emitter voltage minus the voltage drop at the p-n junction to the applied interbase voltage.

Residual voltage UBEnas - direct voltage on the emitter at a given emitter current and interbase voltage. The maximum allowable interbase voltage UB1B2max is the maximum voltage value of any form and frequency between the bases, at which the specified reliability is ensured.

The maximum allowable reverse voltage emitter-base2 UEB2 - the maximum value of the reverse voltage of the emitter junction relative to base2. Modulation current Imod - the minimum current in the base2 circuit for given interbase voltage and emitter current.

Since the KT133 series transistors are produced in the same package as the KT6113 series (see above), their mounting features are the same.

Unijunction transistors of the KT133 series

The main graphic typical dependences of the parameters of transistors KT133A, KT133B on the ambient temperature are shown in fig. 3-5

Author: V.Kiselev, Minsk, Belarus

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