ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING Low-noise antenna amplifier in the 430 MHz band. Encyclopedia of radio electronics and electrical engineering Encyclopedia of radio electronics and electrical engineering / Civil radio communications When conducting radio communications through amateur radio satellites operating on the 144/430 MHz bands for receiving and transmitting, separate antennas are usually used for these bands. When using directional antennas, it becomes necessary to move (rotate) them in elevation and azimuth, which is not easy to implement, and when using omnidirectional antennas, reception is not always satisfactory due to their relatively low efficiency. You can improve reception quality by installing an amplifier in close proximity to the antenna. A diagram of such an amplifier is shown in Fig. 1. Its gain is 12 ... 20 dB (depending on the type of transistor), the bandwidth at the level of 3 dB is about 10 MHz, the SWR at the input at the center frequency of the range does not exceed 1,3. At the input and output of the amplifier, selective LC circuits L1C1C2 and L3C9C10 are installed, and to protect the transistor from a powerful transmitter signal at the input and output, diodes VD1VD2 and VD3VD4, respectively. The DC transistor mode is provided by the resistor R1, the supply voltage is stabilized by the integral stabilizer DA1. The amplifier is fed through the drop cable through the L4 inductor, the VD5 diode protects the device from reverse polarity of the supply voltage. Field-effect transistors AP325A-2, ZP344A-2, AP344A-2, ZP602A-2 are applicable in the amplifier. Better results can be obtained by using an ATF-10136 low-noise field-effect transistor, designed for operation in the frequency range of 0,5 ... 12 GHz and having a gain of about 20 dB. Diode VD5 - any small-sized rectifier, trimmer capacitors - KT4-25, constant - K10-17V (without leads), resistors - P1-12, MLT or P1-4 with leads of the minimum length. Coils L1 and L3 are wound with PEV-2 0,8 wire on a mandrel with a diameter of 4 mm and contain 1,5 turns, the winding length is 5 mm. Coils L2 and L4 are wound turn to turn on a mandrel with a diameter of 2,5 mm and contain 12 ... 14 turns of wire PEV-2 0,2. Almost all parts of the amplifier are located on one side of a printed circuit board made of double-sided foil fiberglass 1 ... 1,5 mm thick, a sketch of which is shown in fig. 2. The second side of the board does not have printed conductors, but is left metallized and connected along the contour to a common wire. Also, a plate of double-sided foil fiberglass with dimensions of 2x20 mm is soldered to it, which is used as a reference contact and diodes VD1 and VD2, capacitors C1 and C2, coil L1 are soldered to it, and through a hole in the board - the gate of the field effect transistor / T1. The design of the amplifier is shown in fig. 3. Board 1 is soldered on both sides in a metal frame 2 made of tinned sheet or similar material. The frame has HF coaxial sockets 3 and 4 for connecting the antenna and feeder. Capacitor C1 is installed between socket XS1 and plate 5, capacitor C2 is placed on socket XS10, and C9 and L4 are placed between XS2 and the board. The amplifier is closed on both sides with covers that are soldered to the frame. After sealing, the device must be covered with moisture-resistant paint or varnish, placed on the antenna - nests down so that water does not flow into it, and, preferably, placed under a small canopy. After connecting the cables, the connectors must be sealed with an elastic sealant. To power the amplifier through the feeder, a power supply is installed next to the transceiver, the circuit of which is shown in Fig. 4. Coil L1 in it is similar to the coil L4 of the amplifier, capacitors C1, C2 - K10-17V. All interconnections must be of a minimum length, and for the manufacture of the device, you can use a piece of double-sided foil fiberglass, placing parts on it and soldering RF cables to it, while one of the sides must be used as a common conductor. Setting up the device comes down to setting the drain current to 1 mA by selecting the resistance of the resistor R25. After that, a drain-source voltage of 2 V is set with a resistor R2. By building capacitors, maximum gain is achieved at the required frequency, while achieving the minimum SWR at the input with capacitors C1C2. This setting can be carried out by ear - for the best quality of weak signal reception. To increase the stability of the amplifier to excitation, it is recommended to put a ferrite bead on the drain terminal of the transistor or include a small-sized resistor P1-4, P1-12 with a resistance of 5 ... 10 Ohm in the drain circuit. Author: I. Nechaev (UA3WIA), Kursk See other articles Section Civil radio communications. Read and write useful comments on this article. Latest news of science and technology, new electronics: The world's tallest astronomical observatory opened
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