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ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING
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The power supply of the AF amplifier on microcircuits and transistors. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Power Supplies

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The power supply is bipolar, with overload protection for the output current level of 1 or 3 A.

AF amplifier power supply on microcircuits and transistors
(click to enlarge)

The protection threshold is changed by switch S2. A voltage of 18 V is used to power the output stages of the amplifier; voltage ¦ 12 V is used to power the OU type K140UD1B. A unipolar low-power rectifier with a simple stabilizer is used to power the auxiliary devices of the amplifier (separating active filters, etc.).

The power transformer is made on a toroidal magnetic circuit with an outer diameter of 115 mm, an inner diameter of 60 mm and a height of 40 mm. Its primary winding contains 880 turns of PEL wire - 0,6 with a tap from the 550th turn, the secondary winding has 2 x 70 turns of PEL wire - 1,5.

The inductor L1 is wound on a W-shaped magnetic circuit with a cross section of 1 cm2 with a PEL wire - 0,1 and has 1000 turns. The inductor can be wound on a different core and with a different wire, but at the same time, the resistance of its winding to direct current should not exceed 100 ... 120 Ohms, and the inductance should be as large as possible.

Transistors V15 and V22 should be installed on a radiator with an area of ​​200-300 cm2. The transistor housing should be insulated from the heatsink with a mica gasket or a layer of epoxy impregnated paper.

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