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Powerful converter 12/350 volts on IC. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Voltage converters, rectifiers, inverters

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The master oscillator of the converter (Fig. 4.67) is assembled on a standard PWM controller (import analogue from the 494th series). The controller generates control signals for the power amplifier transistors, excluding through currents through them. "Dead time" (Dead time) is at least 3% of the duration of the oscillation period and is set by the voltage at pin 4 of the DA1 chip: at 0 V - 3%, at 3,5 V - 100%.

Powerful converter 12/350 volts on IC

The controller has two amplifiers, one of which is used to prevent battery discharge (will not allow the converter to work when the battery voltage drops below 8 V).

It is advisable to install a circuit to prevent battery discharge not only when it is a pity to ruin the battery, but also when power transistors are used without logical control, i.e. without the letter L (they have an opening threshold of 4 ... 6 V), and if the battery is strongly discharged, they can switch to active mode, which will damage the circuit due to overheating.

The conversion frequency is set by the elements C3, R8 and at the indicated ratings is 40 kHz.

To change the frequency, these elements can be changed within 500 pF ... 0,1 μF and 1 ... 100 kOhm. Converter no-load current - 70 mA, consumption under load - 5 ... 7 A at maximum load (about 100 W). The efficiency is 98%. The battery used is 12 V (10 Ah). The core of the transformer T1 is two M2000NM ferrite rings of size K32x16x9 (diameter 32 mm, cross section 1,4 cm2, 3 V per turn).

The primary winding contains 4 + 4 turns, a wire with a diameter of 0,91 mm (wound in 4 wires laid with tape). Secondary winding - 130 turns with a diameter of 0,45 mm.

As a DA1 chip, any controller from the 494 series (TL494, UC494, tsRS494, CD494, KA7500) is suitable. Transistors VT1 and VT2 can be KT645, KT3102, etc.

Field-effect transistors (not IGBT and not KP954) with a maximum voltage of at least 50 V, channel resistance <0,015 Ohm and gate capacitance <3000 pF. The IRL3705L transistors have an on-resistance R-zc of 0,01 ohms and can be replaced by two IRFZ44Ns connected in parallel (R3C = 0,022 ohms).

There are Minsk transistors from the plant "Integral" KP732G, they are better than the declared analogue IRFLZ44, their nameplate resistance is 28 mOhm, and according to measurements - 18 mOhm, and they are cheaper. Of our new ones, KP812 will do. It is advisable to use high-speed diodes VD3 ... VD6 (not fast ones get very hot at high loads), with a reverse voltage of at least 400 V, and for a current of at least 1 A.

Author: Semyan A.P.

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