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ENCYCLOPEDIA OF RADIO ELECTRONICS AND ELECTRICAL ENGINEERING
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Logic probe on two chips. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Measuring technology

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A logic probe on two microcircuits is designed to check the voltage levels corresponding to "0" or "1" in digital device circuits.

Logic probe on two chips
(click to enlarge)

When the voltage of the pulse applied to the input of the probe is higher than 2,4 V, the number "1" is displayed on the indicator of the probe, and when the voltage of the pulses is below 0,4 V - the number "0".

Resistor R1 protects the probe from overload. Emitter followers V1 and V2 serve to reduce the load on the stage under test and to shift the switching threshold of logic elements D1.1 and D1.2. An additional shift is achieved by turning on diodes V3 and V5. As a result, at voltages above 2,4 V, the D1.1 element turns on and the segment d of the H1 indicator lights up - the sign "1" is displayed. At voltages below 2,4 V, element D1.1 does not conduct current and segment d stops glowing. When the input voltage drops below 0,4 V, the element D1.2 turns off, D1.3 turns on, four segments (a, b, g and f) light up and the number "0" lights up on the indicator.

If there are pulses at the input of the probe, the trigger on the elements D2.1 and D1.4 switches at the moment the voltage of the pulses reaches the threshold value (0,4 and 2,4 V). At the moment the voltage at the input of element D2.2 changes from state "1" to state "0", a short pulse from the output of this element opens the waiting multivibrator (elements D2.3 and D2.4). The output signal causes the dot on the indicator to glow. If the amplitude of the input pulses is below normal, the trigger does not switch and the dot does not light.

The probe is powered from the power source of the device under test.

Transistors KT361 and KT373 can be of the same series with any letter indices. They can be replaced by other high-frequency silicon transistors with appropriate conductivity. Diodes - any low-power silicon (V3, V4) and germanium (V5, V6). Any microcircuit is suitable, similar in structure.

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