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Minimum operating voltage indicator. Encyclopedia of radio electronics and electrical engineering

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Encyclopedia of radio electronics and electrical engineering / Measuring technology

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Below is a diagram of a simple minimum operating voltage indicator.

Minimum operating voltage indicator

The circuit is easy to manufacture, low current consumption. Operating voltage 6-24 volts. Current consumption without indication (standby mode: 60-240 mkA) and in indication mode: 1,5-6 mA.

Publication: cxem.net

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Heat resistant memory for interplanetary missions 28.07.2019

Studies of the two planets closest to the Sun, Mercury and Venus, have always been complicated by the fact that the conditions on their surfaces are extremely unfavorable. For example, Mercury can heat up to 430 ° C, and Venus, due to the characteristics of the atmosphere, even more. Therefore, any apparatus that studies these celestial bodies up close must be prepared accordingly.

Modern electronics are very sensitive to heat, and temperatures of hundreds of degrees Celsius are detrimental to them. However, scientists have been trying to solve this problem for many years and it seems that they have achieved some success. For example, Arizona State University recently announced the development of next-generation electronics modules under the NASA-funded HOTTech program, on the basis of which it was possible to create memory elements that can withstand high temperatures - up to 300 ° C and even higher.

Gallium nitride was taken as the basis material for creating high-temperature electronics. The fact is that silicon, which is traditionally used to create microprocessors and memory modules, has a relatively low band gap (this indicator determines the minimum energy required for an electron to move from the valence band to the conduction band) - only 1,12 eV. At the same time, for gallium nitride, it is 3,4 eV, which allows devices to operate normally at much higher temperatures. At the same time, it is noted that this is not the only semiconductor material with a wide band gap being studied as part of the high-temperature electronics program. Another worthy candidate with a wide bandgap is silicon carbide.

The memory device was fabricated by chemical vapor deposition on a gallium nitride substrate. During testing, the memory module showed stable performance over the entire range from 25 to 300°C. When the temperature rose to 350°C, control over the processes was lost, but it was restored after the temperature dropped to room temperature. Thus, even in the case of extreme heating, the memory module itself will not be lost, although it will stop working normally for a while. At the same time, as Yuji Zhao notes, the results of the work are intermediate and the next step will be the creation of memory modules that can withstand up to 500 ° C in normal mode, and with such electronics it is already possible to explore the surface of even Venus, even Mercury.

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