Field effect transistors. Symbols for electrical parameters. Reference data
Encyclopedia of radio electronics and electrical engineering / Reference materials
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designation |
Parameter |
S1-S2/I(U) |
slope of the field-effect transistor characteristic (minimum and maximum values) measured at a given drain current (I) or at a given drain voltage (U). |
I01-I02/U |
the initial drain current of the field-effect transistor (minimum and maximum values) and the drain voltage at which this value is measured. |
I/U |
the gate leakage current when drain and source are combined, and the voltage between drain and gate at which the leakage current is measured. |
C11 |
input capacitance of the field effect transistor. C11=Czi+Czs. |
C12 |
pass capacitance of the field-effect transistor. C12=Cзс. |
C22 |
output capacitance of the field effect transistor. C22=Czs+Czi. |
Fw/F |
noise figure of the field-effect transistor and the frequency at which the measurement is performed. |
(U0)Uzi/Is |
cut-off voltage (U0) of a field-effect transistor or gate-source voltage (Uzi) at a given drain current (Ic). |
Uzs |
The maximum permissible DC voltage between gate and drain. |
Uzi |
The maximum permissible DC voltage between gate and source. |
Usi |
the maximum permissible DC voltage between drain and source. |
Ic |
maximum permissible continuous drain current. |
P |
the maximum permissible constant power dissipation per transistor. |
A type |
type of field effect transistor (MIS, PN or Schottky). |
Kahn |
FET channel type. |
tsok |
number of the figure with pin locations. |
Publication: cxem.net
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