Powerful field effect transistor KP784A. Reference data

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Powerful field effect transistor KP784A. Reference data

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Silicon p-channel transistors KP784A with an insulated gate and channel enrichment, with a built-in protective diode, are manufactured using planar epitaxial technology. The devices are designed to work in secondary power sources with transformerless input, in regulators, stabilizers and voltage converters with continuous and pulse control, in computer power units, in electric motor drive devices and other equipment for wide application.

The transistors are packaged in a plastic case KT-28-2 (TO-220AV) with rigid stamped tinned leads (Fig. 1).

Powerful field effect transistor KP784A

Weight of the device - no more than 2,5 g.

Foreign analogue of the transistor KP784A - IRF9Z34.

Main Specifications

Threshold voltage, V, at a drain current of 0,25 mA and connected gate and source.....2...4
Open channel resistance, Ohm, no more, with a pulse duration of not more than 300 μs and a duty cycle of at least 50, with a drain current of 11 A and a gate-source voltage of 10 V ..... 0,14
Residual drain current, µA, no more, at drain-source voltage of 60 V and zero gate-drain voltage.....100
Gate leakage current, µA, not more, at gate-source voltage ±20 V and zero drain-source voltage.....±0,1
The steepness of the current-voltage characteristic, A / V, not less, with a pulse duration of not more than 300 ms and a duty cycle of at least 50, at a drain-source voltage of 25 V and a drain current of 11 A ..... 5,9
Constant forward voltage of the protective diode, V, not more, with a pulse duration of less than 300 ms and a duty cycle of more than 50, at zero gate-source voltage and drain current 18A ..... 6,3
Maximum operating frequency, MHz.....1
Thermal resistance transition-housing, °С/W, max.....1,7
Turn-on delay time, no, no more, at a drain-source voltage of 30 V, a drain current of 18 A and an output impedance of the signal source of 12 Ohm ..... 40
typical value.....20
Transistor capacitance, pF, no more, at drain-source voltage 25 V, zero gate-source voltage and frequency 1 MHz, input.....1540
day off.....660
checkpoint.....140
The rise time of the drain current, not, not more, at a drain-source voltage of 30 V, a drain current of 18 A and an output impedance of the signal source of 12 Ohm ..... 240
typical value.....120
Drain current decay time, no, no more, at a drain-source voltage of 30 V, a drain current of 18 A and an output impedance of the signal source of 12 Ohm ..... 116
typical value.....58

* At case temperature 25 °С.

Limit values

The highest drain-source voltage, V ..... 60
Maximum gate-source voltage, V.....+20
The highest direct current * drain, A ..... 18
The highest pulsed current * drain, A ..... 72
The highest continuous power dissipation, W, at a case temperature of 25 °C ** ..... 88
The highest transition temperature, ° С..... 175
Working range of ambient temperature, °С.....-55...+150

* Provided that the highest values of power dissipation and junction temperature are not exceeded.

** In the case temperature range Тkorp +25...+150 °С, the maximum power must be reduced in accordance with the formula

Pmax =(Tnepmax -Tcorp)/Rt.n-k where Tnepmax is the highest allowable transition temperature; Rt.n-k - thermal resistance of the transition-housing.

Permissible value of static potential - 200 V (III degree of rigidity according to OST 11073.062). The operating mode and conditions for mounting transistors in equipment must comply with OST 11336.907.0 (see the article by V. Kiselev "Field-effect transistors of the KP737 series"in "Radio", 2002, No. 5, pp. 47, 48). No more than three resoldering of the transistor leads is allowed during assembly and assembly operations.

The main typical graphic dependences of the parameters of the KP784A transistor are shown in fig. 2-5.

Powerful field effect transistor KP784A

On fig. Figures 2a and 25b show the dependences of the drain current Ic on the drain-source voltage Uc at two case temperatures Tkorp - 10 ± 150 and 3 °C, and in fig. XNUMX - from the gate-source voltage Uzi.

Powerful field effect transistor KP784A

The change in the channel resistance RK of an open transistor in the operating temperature range of the junction is illustrated in Fig. 4 (RK - current value of the channel resistance; Rk25 - channel resistance at Тper = 25 °С).

Powerful field effect transistor KP784A

The dependence of the input, output and through capacitance on the drain-source voltage is shown in fig. 5.

Powerful field effect transistor KP784A

Author: V. Kisilei, Minsk, Belarus

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