Field-effect transistors of the KP737 series. Reference data

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Field-effect transistors of the KP737 series. Reference data

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Powerful silicon field-effect transistors KP737A-KP737V with an insulated gate enriched with an n-channel and a built-in reverse-biased protective diode are manufactured using planar epitaxial technology. The devices are designed to work in transformerless secondary power supplies, stabilizers and voltage converters with continuous and pulse control, in electric motor control devices and other components of electronic equipment for a wide range of applications.

The transistors are packaged in a plastic case KT-28 (TO-220) with hard stamped tinned leads. The mass of the device is no more than 2,5 g. According to the design of the case, the scheme of internal connections and the pinout, they are similar to transistors of the KP727 series (see "Radio", 2002, No. 1, pp. 46 - 48).

Foreign functional analogues: KP737A - IRF630, KP737B - IRF634, KP737V - IRF635.

Main characteristics at Tacr cf =25°C

Gate-source threshold voltage, V, with connected drain and gate and drain current 0,25 mA......2...4
Drain current, A, not less, with a pulse duration of less than 300 μs, a duty cycle of more than 50 and a gate-source voltage of 10V for KP737A (at a drain-source voltage of 4 V)...... 9
KP737B(4V)......8,1
KP737V (4,8 V)......6,5
Open channel resistance, Ohm, no more, with a pulse duration of less than 300 μs, a duty cycle of more than 50 and a gate-source voltage of 10 V for KP737A (at a drain current of 5,4 A)...... 0,4
KP737B(5,1A)......0,45
KP737V(4,1A)......0,68
Residual drain current, μA, no more, at maximum drain-source voltage and zero gate-source voltage ...... 250
Gate leakage current, nA, no more, at gate-source voltage ±20 V and zero drain-source voltage ...... ±100
The slope of the current-voltage characteristic, A / V, not less, with a pulse duration of less than 300 μs, a duty cycle of more than 50 and a drain-source voltage of 25 V for KP737A (at a drain current of 5,4 A)...... 3,8
KP737B(5,1A)......3,6
KP737V(4,1A)......2,9
Constant forward voltage on the protective diode (with a reverse drain-source voltage), V, not more, with a pulse duration of less than 300 μs, a duty cycle of more than 50, zero gate-source voltage and the maximum absolute value of the current through the drain output...... 2
Thermal resistance transition-housing, °С/W, max......1,7
Thermal resistance transition-environment, °С/W, no more......62
Reverse recovery time of the protective diode, not (typical value), with a pulse duration of less than 300 μs, a duty cycle of more than 50, a forward current of 5,9 A and a current decrease rate of 100 A / μs for KP737A ...... 340
KP737B ...... 380
KP737V......390
On Time*, not (typical), 300µs or less, 50 or more duty cycles, 100V drain-to-source, 5,9A drain-to-drain, 16Ω drain-to-source, and 12Ω signal source output impedance for KP737A......41
KP737B, KP737V......48
Off Time*, not (typical), at 300 ms or less pulse width, 50 duty cycle or greater, 100 V drain-to-source voltage, 5,9 A drain current, 16 ohm drain-to-source resistance, and 12 ohm signal source output impedance for KP737A......59
KP737B, KP737V......62
Input capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz ...... 1300
Output capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz ...... 360
Capacitance*, pF, no more, at zero gate-source voltage, drain-source voltage 25 V and frequency 1 MHz ...... 120

*Reference parameters

Limit values

The highest drain-source voltage, for KP737A ...... 200
KP737B, KP737V......250
Maximum gate-source voltage, V......20
The highest direct drain current, A, at a case temperature of 25 ° C for KP737A ...... 9
KP737B ...... 8,1
KP737V......6,5
The highest pulsed drain current, A, at a case temperature of 25 ° C for KP737A......36
KP737B ...... 32
KP737V......26
The highest constant power dissipation, W, at a case temperature of 25 °С......74
The highest transition temperature, ° С ...... 150
Ambient temperature operating range, °С -55...+125
The highest permissible value of the static potential is 200 V (III degree of rigidity according to OST 11073.062).

The conditions for mounting transistors in equipment must comply with OST 11336.907.0. It is not allowed to use transistors at the limit values of two or more combined parameters. To improve reliability, it is recommended to operate the devices at parameter values not exceeding 70% of the limit values.

During installation, one-time bending of the leads is allowed no closer than 5 mm from the edge of the case, the bending radius is at least 1,5 mm. The fold line must lie in the plane of the pins. Conclusions cannot be twisted. When bending, measures must be taken to prevent the transfer of force to the body. -

The distance from the body to the place of tinning and soldering of the leads must not be less than 5 mm. Soldering temperature - no more than 265°С, tinning time - no more than 2 s, soldering time - no more than 4 s.

In order to reduce the thermal resistance of the case-heat sink, it is recommended to cover the place of their contact with heat-conducting lubricants or pastes, for example, KPT-8 according to GOST 19783. If there is an insulating gasket under the transistor, its thermal resistance must be taken into account.

Typical graphic dependences of the parameters of transistors KP737A - KP737V are shown in fig. 1-7.

On fig. 1a shows the dependences of the drain current on the drain-source voltage at various values of the voltage between the gate and the source and the normal case temperature, and in fig. 1, b - the same dependences at a case temperature of 1505 °C.

Field-effect transistors of the KP737 series

The typical transfer characteristic of the devices at two case temperatures is shown in fig. 2.

The normalized temperature dependence of the open channel resistance is shown in fig. 3, and typical dependences of the input, output and throughput capacitance on the drain-source voltage are shown in fig. 4. As the transistor body heats up, the maximum drain current must be reduced in accordance with the graph in fig. 5.

Field-effect transistors of the KP737 series

A typical dependence of the gate capacitance charge on the gate-source voltage is shown in fig. 6.

Field-effect transistors of the KP737 series

The capabilities of the built-in protective diode are illustrated in fig. 7, where Ic is the current through the drain terminal of the transistor if the diode is open, and Upr is the direct voltage drop across the diode.

Field-effect transistors of the KP737 series

Author: V.Kiselev

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