Transistors of the KT8156 series. Reference data

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Transistors of the KT8156 series. Reference data

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Powerful silicon composite npn transistors KT8156A and KT8156B with integral damping and base-emitter accelerating diodes are manufactured using epitaxial-planar technology. The devices are designed to operate in horizontal scan output stages of small-sized cathode ray tubes and other components and blocks of widely used equipment.

The transistors are housed in a standard plastic case KT-28 (TO-220) with rigid plate-tinned terminals (Fig. 1). The weight of the device is no more than 2,5 g.

KT8156 series transistors

Foreign analogue of the transistor KT8156A - BU807.

The schematic diagram of the device is shown in fig. 2.

KT8156 series transistors

Main characteristics

Collector-emitter boundary voltage, V, no less (with a collector current of 100 mA, zero base current, pulse duration of no more than 500 μs and duty cycle of no less than 100), for KT8156A...... 150
KT8156B......200
Reverse collector current, mA, no more (at a collector-base voltage of 330 V and zero emitter current), for KT8156A......0.1
KT8156B......1
Reverse collector-emitter current, mA, no more (at a collector-emitter voltage of 330 V and zero emitter-base voltage), for KT8156A......0,1
KT8156B......1
Reverse emitter current, mA, no more (at an emitter-base voltage of 6 V and zero collector current).......3
Static current transfer coefficient, not less (at a collector-emitter voltage of 1,5 V and a collector current of 5 A).......100
Collector-emitter saturation voltage, V, no more (at a collector current of 5 A and a base current of 50 mA).......1.5
Base-emitter saturation voltage, V, no more (at a collector current of 5 A and a base current of 50 mA).......2,4
Thermal resistance transition-housing, °С/W, max......2,08
Forward voltage damping diode. B, no more ...... 2
Operating temperature range, °С......-60...+100

Limit values

The highest collector-base voltage, V ...... 330
The highest collector-emitter voltage, for KT8156A......150
KT8156B......200
The highest emitter-base voltage, V ...... 6
Highest constant collector current. A......8
The highest pulse collector current. A (with a pulse duration of no more than 10 ms and a duty cycle of at least 100).......15
The highest constant power dissipation of the collector. W (when installed on a heat sink and the case temperature is within -60...+25°C).....60
The highest constant power dissipation of the collector. W (without heat sink at ambient temperature within -60...+25°C).......1,5
The highest transition temperature, ° С ...... 150

It is not allowed to operate transistors at the extreme values of two parameters.

One-time bending of the device leads is permissible no closer than 5 mm from the body (it is not recommended to bend them in the plane of the leads). In this case, it is necessary to take measures to prevent the transfer of force to the body. The bending radius is at least 1,5 mm. The distance from the housing to the place of tinning and soldering of leads should not be less than 5 mm.

In order to improve heat transfer from the transistor to the heat sink, it is recommended that before installing the device, coat its metal flange with a layer of thermally conductive lubricant (for example, KTP-8 according to GOST 19783). In Fig. Figure 3 shows the dependence of the static transfer coefficient of the base current of the transistor on its collector current, in Fig. 4 - dependence of the constant dissipated power of the collector on the housing temperature, and in Fig. 5 - typical dependence of the direct forward voltage on the damping diode (VD2 in Fig. 2) on the forward current through it.

(click to enlarge)

A typical dependence of the collector-emitter saturation voltage on the base DC current is shown in Fig. 6, and from the collector current - in Fig. 7. A typical dependence of the base-emitter saturation voltage on the DC collector current is shown in Fig. 8.

Author: V.Kiselev, Minsk, Belarus

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