Complimentary transistors of the KT6116 and KT6117 series. Reference data

Encyclopedia of radio electronics and electrical engineering / Reference materials

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KT6116A and KT6116B medium-power silicon pnp transistors of wide application are manufactured using planar epitaxial technology. They are designed to work in signal amplifiers, frequency converters and other devices with increased supply voltage.

The transistors are packaged in a standard KT-26 plastic package (TO-92 according to Western classification) with hard tinned leads (Fig. 1). Foreign analogues - KT6116A - 2N5401: KT6116B - 2N5400.

On fig. 2 shows the dependence of the emitter current on the voltage at the emitter junction of transistors of the KT6116 series.

On in fig. 3 - the cutoff frequency of amplification and the static current transfer coefficient of the base from the collector current.

The saturation voltage of the collector-emitter and base-emitter as a function of the collector current is shown in fig. 4.

A typical dependence of the collector junction capacitance of transistors on the DC collector-base voltage is shown in fig. 5, and the area of ​​safe operation - in fig. 6.

Silicon npn transistors of medium power of wide application KT6117A and KT6117B are also manufactured using planar epitaxial technology. They are designed to work in signal amplifiers, frequency converters and other devices with increased supply voltage.

The transistors are packaged in a standard KT-26 (TO-92) plastic case with hard tinned leads (see Fig. 1). Foreign analogues - KT6117A - 2N5551; KT6117B - 2N5550.

Transistors KT6117A, KT6117B and KT6116A, KT6116B can be selected in complementary pairs.

A typical dependence of the emitter current on the voltage of the base-emitter of transistors of the KT6117 series is shown in fig. 7, and typical output characteristics - in fig. 8.

Typical dependences of the cutoff frequency and saturation voltage of the collector-emitter and base-emitter on the collector current, as well as the capacitance of the collector junction on the constant collector-base voltage are shown in fig. 9-11 respectively.

The area of ​​safe operation of transistors of the KT6117 series is the same as that of the transistors of the KT6116 series (see Fig. 6).

In conclusion - a few tips common to transistors of both series. It is not recommended to operate transistors at low current, commensurate with uncontrolled reverse current in the entire temperature range. It is also not allowed to operate devices at two limit values ​​of electrical parameters.

When turning on a transistor in an electrical circuit that is energized, the base terminal must be connected first (and disconnected last).

One-time bending of the transistor leads is allowed at a distance of no closer than 2 mm from the case; bending radius - not less than 1.5 mm. When bending, it is necessary to take measures to prevent the transfer of force to the body.

The distance from the body to the place of soldering (tinning) of the output is at least 3 mm. During installation, only three soldering leads are allowed. Soldering temperature - not higher than 265'С, soldering time - no more than 4 s.

It is allowed to use transistors of conventional climatic modification in equipment designed for operation in any climatic conditions, but at the same time they must be coated after installation with three or four layers of varnish UR-231 (TU6-21-14) or EP-730 (GOST 20824) with subsequent drying.

Main characteristics at Tacr cf =25°C

• Static current transfer coefficient of the base at a collector-emitter voltage of 5 V and a collector current of 10 mA for
• KT6P6A......60...240
• KT6116B......40...180
• Collector reverse current, µA, not more, for KT6116A (at collector-base voltage 120 V)......005
• KT6P6V(100V)......0.1
• Reverse emitter current, μA. no more, at an emitter-base voltage of 3 V and zero collector current......0.05
• Reverse collector-emitter current. mA, no more, with the base disabled for KT6116A (at a collector-emitter voltage of 150 V)...... 1
• KT61165(120 V)......1
• Collector-emitter saturation voltage. V. no more, at collector current
• 50 mA and base current 5 mA......0.5
• Saturation voltage base - emitter, V, not more, at a collector current of 50 mA and a base current of 5 mA......1
• Limiting frequency of the current transfer coefficient, MHz. not less, at a collector-emitter voltage of 10 V and a collector current of 10 mA......100
• collector junction capacitance. pF. no more, with a collector-base voltage of 10 V and zero emitter current at a frequency of 10 MHz ...... 6
• Noise figure, dB, no more, with a collector-emitter voltage of 3 V, a collector current of 200 μA and a resistance in the base circuit of 3 kOhm. at a frequency of 1 kHz for KT6116A......8
• KT6116B......10
• Thermal resistance junction - environment. °С/W, no more than......200

Limit values

• The highest voltage collector - base. B, for KT6116A......160
• KT6116B......130
• The highest collector-emitter voltage, V, for KT6P6A......150
• KT6116B......120
• The highest base-emitter voltage, V ...... 5
• The highest DC collector current, A ...... 0.6
• The highest constant dissipated power of the collector, W......0,625
• Permissible value of static potential (IV degree of rigidity according to OST 11073.062), V ...... 500
• The highest transition temperature, ° С ...... 150
• Limit values ​​of ambient operating temperature, °С......-45...+100
• Main characteristics at Tacr.av = 25°C
• Static base current transfer coefficient at a collector-emitter voltage of 5 V and a collector current of 10 mA for KT6117A ...... 80 ... 250
• KT6117B......60...250
• Collector reverse current, μA, no more, for KT6117A (at a collector-base voltage of 120 V)...... 0,05
• KT6117B(100V)......0,1
• Reverse emitter current, μA, not more, at emitter-base voltage of 3 V and zero collector current ...... 0,05
• Reverse collector-emitter current. mA, no more, with the base disabled for KT6117A (at a collector-emitter voltage of 160 V)...... 1
• KT61175(140 V)......1
• Saturation voltage collector-emitter, V. no more, at a collector current of 50 mA and a base current of 5 mA for KT6117A ...... 0.2
• KT6117B......0.25
• Base-emitter saturation voltage. V. no more, with a collector current of 50 mA and a base current of 5 mA for KT6117A......1
• KT6117B......1,2
• Cut-off frequency of the current transfer ratio. MHz, not less, at a collector-emitter voltage of 10 V and a collector current of 10 mA......100
• Collector junction capacitance, pF, no more, at a collector-base voltage of 10 V and zero emitter current at a frequency of 10 MHz ...... 6
• Noise figure, dB, no more, at a collector-emitter voltage of 5 V, a collector current of 200 μA and a resistance in the base circuit of 2 kOhm, at a frequency of 1 kHz for KT6117A...... 8
• KT6117B......10
• Thermal resistance transition-environment, 'С/W, no more......200

Limit values

• The highest collector-base voltage, V, for KT6117A......180
• KT6117B......160
• The highest collector-emitter voltage, V, for KT6117A......160
• KT6117B......140
• The highest base-emitter voltage, V ...... 6
• The highest DC collector current, A ...... 0.6
• The largest constant power dissipation of the collector. W ...... 0,625
• Permissible value of static potential (IV degree of rigidity according to OST 11073.062), V ...... 500
• The highest transition temperature, ° С ...... 150
• Limit values ​​of ambient operating temperature, °С......-45...+100

Author: V.Kiselev

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