20nm DRAM LPDDR3 chips with a density of 6Gb. Free Technical Library News

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20nm LPDDR3 DRAM chips with 6Gb density

17.09.2014

Samsung announced the start of mass production using 20nm 3Gb DRAM LPDDR6 mobile device memory technology.

The new memory supports a data transfer rate of 2133 Mbps per pin. Chips can be packed four pieces in a common package, getting chips with a capacity of 3 GB.

These ICs are 20% smaller and consume approximately 10% less power than existing 3GB LPDDR3 ICs that use components manufactured by Samsung using previous generation technology.

Recall that at first the South Korean manufacturer mastered the production of 20-nanometer DDR3 memory technology for PCs. In March of this year, it became known that Samsung began mass production of 20nm DDR3 memory chips with a density of 4Gbps. In the future, Samsung expects to master the production of even more advanced mobile memory chips using this technology.

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Since England is connected to the mainland by a tunnel across the English Channel, the authorities have been worried about the constant influx of illegal immigrants through this tunnel - according to some reports, up to a thousand people a month.

Who walks through the tunnel, who hides in freight trains, and who - in heavy trucks with trailers. The driver, as a rule, does not participate in this "game of hide and seek", but it is he who is very sensitively fined when an illegal passenger is detected at the border in one way or another.

To detect people hiding in a cargo van, the British firm Arkitekta offers a carbon dioxide sensor released during breathing. It is installed in the van and does not require any special cables for connection: the information goes to the driver's cab through the existing electrical wiring of the car. The instrument display simply plugs into the cigarette lighter on the dashboard. Seeing the alarm signal, the driver can contact the border authorities by phone.

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