AF power amplifier TDA7384A. Reference data
Encyclopedia of radio electronics and electrical engineering / Reference materials
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The microcircuit is a four-channel AF bridge power amplifier with a maximum output power of up to 4x40 W at a load of 4 ohms. It works in AB mode and is intended for use in automotive sound reproducing equipment.
Structurally, the amplifier is made in a plastic Flexiwatt25 case with 25 hard tinned leads (Fig. 1). The back flat side of the case is a metal heat sink plate. With this side, the microcircuit is attached to the massive wall of the apparatus, having previously covered the joint area with thermally conductive grease. Weight of the device - no more than 10 g.
With a minimum of required external components, the microcircuit provides the possibility of building a four-channel amplifier, implementing the functions of operational noiseless switching off of the output signal ("Mute") and switching to the standby mode ("Stand-By"). The amplifier has a low level of self-noise and low harmonics. Due to the construction of the output stages of the amplifier in a bridge circuit, there is no need for coupling capacitors.
The microcircuit is equipped with built-in protection units against shorting the output and output conductors to the positive power wire and common wire, as well as from supply voltage in reverse polarity and overheating. A load connection with a large inductive resistance is provided. The microcircuit is not in danger of disconnecting the common wire.
On fig. 2 shows a block diagram of the amplifier, its pinout and a typical circuit for its inclusion. The heat sink plate of the housing is electrically connected to terminal 1. Pin 25 is free. The minimum recommended capacitance of the capacitor C10 is 10 uF.
Main technical characteristics (at supply voltage 14,4 V, load resistance 4 ohms, input signal frequency 1 kHz, ambient temperature 25 ° C.)
Current consumption, mA, in the absence of a signal with a disconnected load
typical value |
120 350 ...
190 |
Voltage gain, dB, minimum
typical value |
25 27 ...
26 |
Spread of gain values by channels, dB, no more |
+1 |
Output power of one channel, W, not less, at a supply voltage of 13,2 V and a coefficient of non-linear distortion
10%
typical value
0,8%
typical value |
20
22
15
17 |
Output power of one channel, W, not less, at a supply voltage of 14,4 V and a coefficient of non-linear distortion
10%
typical value |
24
26 |
THD, % (Typical), at 4 W output power |
0,15 |
The highest intrinsic noise voltage, µV, in the frequency band from 20 Hz to 20 kHz
typical value |
70
50 |
Depth of suppression of supply voltage ripples with an average value of 1 V and a frequency of 100 Hz, dB, not less than |
50 |
The lowest value of the upper frequency of the bandwidth, kHz, at an output power of 0,5 W
typical value |
100
200 |
The lower frequency of the passband, Hz, with a capacitance of input coupling capacitors of 0,1 μF |
16 |
Input resistance, kOhm, not less than
typical value |
70
100 |
Current consumption at pin 4 in "Stand-By" mode, μA |
100 |
Reducing the output signal level when switching to the "Mute" mode, dB, not less, at an output power of 4 W
typical value |
80
90 |
Current consumption at pin 22 in "Mute" mode, uA
typical value |
5 20 ...
11 |
Operating limits
Maximum supply voltage, V |
28 |
The highest pulse supply voltage, V, with a pulse duration of not more than 50 ms |
50 |
The largest amplitude of the output pulse current, A,
at an output signal frequency of 10 Hz and a duty cycle of 10
with single pulses with a duration of not more than 100 μs |
4,5
5,5 |
The largest amplitude of the input signal, V |
8 |
Maximum output power of one channel, W (typical value) |
40 |
Maximum power dissipation, W, at case temperature 70 ° С |
80 |
Thermal resistance of the crystal-heat-removing plate, ° С/W, not more than |
1 |
The highest temperature of the crystal, ° С |
150 |
Temperature operating range, ° С |
-55 ... + 150 |
The AF amplifier can be controlled by the inputs "Mute" and "Stand-By" by signals taken directly (without intermediate amplification) from the ports of the microprocessor or from the outputs of logic elements of CMOS microcircuits. The amplifier switches to the indicated modes when a low level voltage is applied to pins 22 and 4.
A high level of control signals corresponds to a voltage of 3,5 V or more, a low level - 1,5 V or less. If the "Mute" and "Stand-By" modes are not used, the corresponding pins of the microcircuit (22 and 4) should be connected directly to the positive power pin.
On fig. 3-5 show the dependences of the current Ipot consumed by one channel of the TDA7384A microcircuit, the output voltage Uout and the maximum output power of one channel Pout for two values of the harmonic coefficient Kg on the supply voltage Upit. On fig. Figures 6 and 7 show the frequency characteristics of the harmonic coefficient and ripple suppression of the supply voltage Upp.p (Rist is the output impedance of the signal source; Upp.eff is the effective ripple voltage), and in fig. 8, 9 - dependences of the harmonic coefficient for two values of the signal frequency and the total power dissipation Рras.sum during simultaneous operation of all channels and the efficiency of the amplifier on the total output power Рout. amounts.
Authors: O.Dolgov, V.Chudnov
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