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Sources of bipolar reference voltage

Encyclopedia of radio electronics and electrical engineering / Power Supplies

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Reference voltage sources, as a rule, are built according to the parametric principle based on voltage and current stabilizers, such as precision zener diodes, field-effect transistors, etc. To ensure the temperature and time stability of the output parameter, it is necessary that a certain operating current flows through these elements. The required mode is set using ballast resistors and stabilization of the supply current.

Sources of bipolar reference voltage
Fig. 1

On fig. 1 shows a diagram of a bipolar reference voltage source based on the stabilization of the static resistance of a precision silicon zener diode VD1 (see L. B. Mashkinov. Reference voltage source. - RF Patent No. 2251139, bull. No. 12, 2005). The device is covered by negative feedback through the operational amplifier DA2. The variable resistor R6 sets the required value of the output positive relative to the common voltage wire. In order for the negative output voltage to be equal to the positive (in absolute value), the inverting follower on the op-amp DA1 must have a transfer coefficient strictly equal to one. This is achieved by a variable resistor R2.

Since the operational amplifiers DA1, DA2 are powered by a bipolar voltage, at the moment the device is turned on, the zener diode VD1 may turn on in the forward - diode - direction, and then the polarity of the output voltage of the source arms will change to reverse. The diode VD2, passing only positive voltage from the output of the op-amp DA2, eliminates the possibility of a polarity reversal.

Sources of bipolar reference voltage
Fig. 2

As the measurements showed, the exemplary source has a temperature and time stability that practically corresponds to the characteristics of the Zener diode VD1. With the output bipolar voltage indicated on the diagram, it was used to power ten-bit DACs and ADCs.

On fig. 2 shows a diagram of a similarly operating exemplary voltage source using a field effect transistor VT1 as an exemplary element. It is known that the characteristic of the transistor indicated in the diagram at a drain current of about 200 μA has a thermally stable point. The required current value is set by selecting the resistor R3. The stability of the output voltage of the source turned out to be almost the same as that of the source on the zener diode.

The load capacity of both sources does not exceed 20 mA.

Such devices can be used in laboratory practice. The use of a more advanced element base (precision zener diodes, op amps with less zero voltage drift and a high gain) will improve the parameters of the described sources.

Author: L. Mashkinov, Chernogolovka, Moscow Region; Publication: radioradar.net

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