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Art and culture / Literature / Ostrovsky A. N. Works

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FOREST - play

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Random news from the Archive

Cold computer memory 27.12.2012

Researchers at the University of California School of Engineering and Applied Sciences have made significant improvements, significantly advancing the ultra-fast, high-bandwidth computer memory class. This type is called magnetoresistive random access memory or MRAM.

The team called their new development MeRAM. It has great potential for use in almost all electronic devices - smartphones, tablets, computers, microprocessors. You can also use it to store data. MeRAM's key advantage over other technologies is its combination of low power consumption, high read and write speeds, and non-volatility - the ability to retain data in the event of a sudden power outage.

Currently, magnetic memory is made on the basis of technology using the spin of electrons, and not just their charges. This technology (SST) uses electrical current to write data to memory. It outperforms other technologies in many ways, but it requires a certain amount of power, and quite a lot of it, and therefore generates heat when recording. In addition, the volume of such memory is limited by the currents required to record information per unit area.

In the case of MeRAM, the scientists replaced current, which plays a key role in SST, with voltage. This eliminates the need to transfer huge amounts of electrons through wires, and instead uses electrical potential differences to switch magnetic bits and record information. As a result, the computer generates much less heat, making it up to 1000 times more energy efficient. And the memory itself can be 5 times denser - more information is stored in the same physical area, which reduces the cost of transferring a bit.

"The ability to switch nanosized magnets using voltage is an important and rapidly growing area of research in magnetism," said electrical scientist Pedram Khalili, project leader at UCLA. how the devices will operate without the need for an external magnetic field and how to integrate them into high-density memory arrays".

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