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Improving the efficiency of MRAM memory

18.04.2019

Magnetoresistive random access memory (MRAM) is considered the most suitable candidate for the next generation of universal memory. However, until recently, managing MRAM efficiently has been a difficult task. A research team led by Professor Chih-Huan Lai and Professor Xuu-Hau Ling was able to make a revolutionary breakthrough.

At present, dynamic memory (DRAM) is mainly used as random access memory in digital devices, but its potential in terms of reducing power consumption and increasing density is close to being exhausted.

The work of DRAM is based on the property of the electron - electric charge. However, the electron has another property - spin. Scientists have suggested that spins can be used to control MRAM cells. By adding a layer of platinum only a few nanometers thick to the cell, the researchers were able to implement a new mechanism for switching magnetic moments that had not been used before. It is based on the use of spin current. Due to spin-orbit interactions, the electric current first controls the collective motion of the electron spins. The spin current then effectively and accurately switches the cell's magnetic moment.

The advantages of MRAM include high speed and small cell size, as well as the ability to random access and save state in the absence of power.

Developments in the field of MRAM are carried out by such large companies as Samsung, Intel and TSMC. It is possible that mass production of high-density MRAM will begin this year.

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