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Innovative 4D NAND Flash

08.11.2018

Korean company SK Hynix, the second largest chip manufacturer in the world, introduced the first ever innovative 4D NAND flash memory.

The novelty is a 96-layer TLC NAND memory that uses charge trap (CTF) and PUC (Peri. Under Cell) memory technologies. The density of the crystal is 512 Gbit.

The prefix 4D means the use of not only the vertical integration of memory cells, but also the placement of peripheral circuits in the underlying layer.

A similar layout has been seen before, as well as CTF technology. SK Hynix's innovation lies in the simultaneous use of both CTF and PUC.

The new solution made it possible to reduce the size of the chip by more than 30%, while the number of chips per wafer, on the contrary, increased by 49% compared to 72-layer 3D NAND crystals of the same density.

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