Artificial embryos that cause pregnancy. Free Technical Library News

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Artificial embryos causing pregnancy

04.05.2018

Researchers from the University of Maastricht and the Royal Netherlands Academy of Sciences have created artificial embryos that even induce pregnancy in mice.

The early stages of pregnancy are essential for the development of the fetus into a healthy baby. And there is a problem here, since doctors still do not know how to eliminate fetal problems at such an early stage of development. They simply cannot see what happens to the embryo immediately after fertilization and, of course, cannot develop drugs to solve any problems associated with it.

Why is the discovery of Dutch scientists important in this context? In mammals, a few days after fertilization of the egg, a blastocyte appears - a hollow sphere of less than 100 cells. In the uterus, the cells inside the blastocyte form the embryo, and the cells in the outer layer of the sphere (trophoblasts) become the placenta.

Nicholas Rivron, principal investigator on the project, says that scientists already knew how to create the outer and inner parts of blastocytes using stem cells, but could not put them together, and the Dutch researchers were the first to create a complete model of a blastocyte, which they called a blastoid.

First, embryonic cells and trophoblasts were grown separately, and then they were combined using a mixture of molecules. When a blastoid was implanted into the uterus of a mouse, the artificial embryo began to behave like a normal one during pregnancy. The cells began to divide and bind to the mother's blood cells.

In humans, blastocytes form five days after fertilization. Cellular development during the blastocyte stage can affect the success of pregnancy.

Since researchers can mass-produce blastoids from stem cells, scientists can thus find cures for infertility and better contraceptives, as well as eliminate possible congenital diseases at the earliest stages of development.

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MDmesh K5 - new 900V MOSFETs from STMicroelectronics 21.11.2017

STMicroelectronics has expanded its K5 family of power MOSFETs with a new 900V version. By using 900V MDmesh K5 transistors, the network power converter can be more reliable than, for example, 650 - 800V MOSFETs.

The new transistors have the lowest Rds (on) among analogs in TO-247 (99 mΩ) and DPAK (810 mΩ) packages. At the same time, it was possible to reduce the gate charge of the transistors, which makes it possible to achieve greater efficiency and operate at higher switching frequencies.

The new MOSFETs have significantly reduced input and output capacitance, allowing the devices to be used in ZVS (Zero voltage switching) circuits. Another feature of the series is the high level of the threshold voltage for turning on the transistor, as a result of which the level of electromagnetic interference of the system is reduced. The high avalanche resistance of the new K5 MOSFETs is an important factor in end-device microsecond transient immunity tests.

MOSFET MDmesh K5 are available in a wide range of packages with channel impedance from 99 mΩ to 2.1 Ω.

Features of MDmesh K5 transistors:

- low Rds (on) values at high drain-source voltage;
- the ability to work at high switching frequencies;
- resistance to avalanche breakdown;
- ESD shutter protection;
- a wide range of devices in various cases.

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