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Boron discovered on Mars

16.09.2017

Mars rover Curiosity found boron in rocks on the Red Planet. The presence of this chemical element on Mars theoretically increases the likelihood of the birth of terrestrial life on the planet.

Curiosity found boron in a calcium sulfate mineral vein in Gale Crater. This means that boron was present in Martian groundwater. It has already been established that the groundwater in this place once had a temperature of 0-60 ° C and was a neutral or slightly alkaline environment in terms of Ph level (which is also quite suitable for the existence of life).

The discovery was made using the scanning laser ChemCam (from the words "chemistry" and "camera") mounted on the rover, created jointly by scientists from Lo Alamos and the French Space Agency.

Boron plays an important role in stabilizing the polysaccharide structure of RNA (ribonucleic acid), one of the key molecules found in all living organisms. Working in conjunction with DNA, RNA ensures the reading of information encrypted in genes and the synthesis of proteins based on it, and this is the basis of the life and development of any living being.

Thus, the presence of boron on the Red Planet theoretically increases the chances that life could once have originated there.

Boron compounds are one of the possible "bridges" between simple organic molecules and RNA. Without RNA, there is no life. The presence of boron tells us that if there was organic matter on Mars, such chemical reactions could occur.

It is noteworthy that the age of the deposits in which boron was discovered is estimated by scientists at 3,8 billion years. This is later than, according to modern ideas, life originated on Earth.

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Non-volatile flash memory B4-Flash 04.03.2012

Japanese flash memory specialist Genusion and ROHM Group have announced that they have signed a licensing agreement. Its subject was B4-Flash flash memory technology, created by Genusion specialists.

The concluded agreement will become the basis for cooperation between the two companies in the development and mass production of B4-Flash memory chips. Genusion released its first serial products back in October last year. In fact, the development and mastering of the corresponding technological process at the ROHM facilities has already been completed.

The basis of the B4-Flash memory is the B4-HE mechanism (injection of "hot" electrons as a result of interband reverse bias tunneling), developed by Genusion specialists. This approach solves one of the main problems associated with traditional flash memory, allowing it to significantly increase its write speed.

B4-Flash technology provides not only high data transfer speed, but also high reliability. Write and erase operations are carried out in B4-Flash crystals 5-10 times faster than NOR flash memory allows. The new memory has a low cost, higher density and resistance to storing recorded information at high temperatures. B4-Flash products can also store data for 20 years at 125°C after 10 erase/write cycles. The memory capacity of the crystals is 512 Mbit and 1 Gbit.

The agreement provides for the release of systems-on-a-chip and other ICs with built-in B4-Flash memory under the trademarks ROHM and Lapis Semiconductor, which is part of the ROHM group. The partners expect that the new memory produced by ROHM will be used in car navigators and smartphones.

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