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Basis for ReRAM memory chips with a density of 100 Gbit

28.06.2017

Sony Semiconductor Solutions talked about developments related to ReRAM memory, which combines the advantages of DRAM and NAND.

Key technologies developed by Sony specialists will enable the production of high-density ReRAM memory chips.

The memory, created by Sony Semiconductor Solutions, uses copper ions. The cell design includes only one sample element and one resistive element (1S1R structure). This makes it possible to manufacture memory in the form of a simple matrix of intersecting lines and arrange such matrices in several layers, increasing the density.

One of the new developments is a barrier between the ion reservoir and the electrolyte, which reduces the uneven resistance. Due to it, it is possible to increase the storage density.

The second technology is the doping of the sampling element with boron and carbon, due to which the leakage current is reduced and the resource is increased.

According to Sony Semiconductor Solutions, the developed technologies will make it possible to produce ReRAM memory with a write time of 100 ns, a resource of 10 million cycles and a density of about 100 Gbps.

ReRAM is expected to fill the gap between DRAM and NAND in terms of cost, performance and integration.

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