Fibocom LTE Cat 1 module for the Internet of Things. Free Technical Library News

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Fibocom LTE Cat 1 IoT Module

27.12.2016

Fibocom Wireless, which specializes in the production of wireless modules for the Internet of things, has introduced the L816-AM model, which the manufacturer calls the thinnest LTE Cat 1 module with 3G / 2G redundant connectivity. The thickness of the specified module is 1,55 mm, which is about half the thickness of the L810 module.

The L816-AM module supports LTE bands 2, 4 and 12, five WCDMA frequency bands and four GSM bands. The product is based on the Intel XMM 7120M modem. The manufacturer notes that the L816-AM has certificates that allow it to be used in the countries of North and South America, Europe and the Asia-Pacific region.

Evaluation samples of L816-AM are already available. The manufacturer expects to be ready for commercial deliveries in early 2017.

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5nm IBM chip 05.06.2017

IBM IT Corporation announced the creation of the first working samples of processors with 5 nanometer transistors. The development was carried out jointly with GlobalFoundries and Samsung Electronics.

The new technology allows up to 30 billion transistors to be placed on a single chip the size of a human fingernail and used in a variety of equipment - from smartphones to spacecraft. The world's first 7nm chips, announced by IBM two years ago, had 20 billion transistors.

A higher density of transistors in a microcircuit increases the speed of the signal passing between them. IBM claims that 5nm solutions are 40% more productive than current 10nm chips, or 75% more energy efficient than them at the same speed.

The presented chip uses a new type of transistors, combined in the so-called silicon nanosheets (silicon nanosheets). They send electrons through four gates, while in the case of FinFET transistors (considered the most advanced at the moment on the mass market), we are talking about three gates. FinFET technology has appeared in 22nm and 14nm semiconductors and is expected to remain in 7nm chips. The semiconductor industry is moving away from FinFET because the technology is not geometrically scalable, said Mukesh Khare, vice president of semiconductor research at IBM Research.

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At the moment, it is still too early to talk about the commercial release of 5-nm chips (tentative dates - 2020). However, it is already known that for the production of such solutions, IBM will use the technology of photolithography in deep ultraviolet (extreme ultraviolet lithography, EUV).

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