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High Voltage MOSFETs for High Speed Switching Devices

12.04.2016

Toshiba Electronics Europe (TEE), the European electronics division of Toshiba Corporation, has introduced a new series of high-speed high-voltage MOSFETs for switching voltage regulators.

The four 800V and 900V n-channel devices feature low typical on-state resistance (RDS(ON)) down to 1,9 ohms. Target applications for the new devices are flyback converters for LED lighting, auxiliary power supplies, and other circuits that require switching currents below 5A.

The new enhancement mode MOSFETs are manufactured using Toshiba's eighth-generation Pi-MOS-8 planar semiconductor manufacturing process, which combines a high level of integration with an optimized cell structure. This technology reduces gate charge and capacitance without losing the benefits of low RDS(ON), the company said.

Toshiba envisions these MOSFETs as a low-current addition to the existing 800V DTMOS IV series with DTMOS4 Super Junction technology. The TK3A90E 2,5A and TK5A90E 4,5A transistors have a VDSS rating of 900V and typical RDS(ON) ratings of 3,7 and 2,5 ohms, respectively. The 4A TK80A4,0E and 5A TK80A5,0E transistors have a VDSS rating of 800V and typical RDS(ON) ratings of 2,8 and 1,9 ohms, respectively.

Toshiba's new MOSFETs feature an ultra-low maximum leakage current of only 10µA (VDS = 60V) and a gate voltage threshold range of 2,5 to 4,0V (at VDS = 10V and 0,4mA drain current) . All devices are shipped in standard form factor TO-220SIS cases.

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