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Quantum dot photosensors outperform CMOS sensors

23.11.2015

The digital camera market could be revolutionized. The young company InVisage Technologies has proposed photosensors that are superior in all respects to traditional silicon CMOS sensors.

In this case, a new type of sensors can be manufactured on the same equipment as CMOS-type sensors.

It's important to emphasize that InVisage didn't just announce a new development. She approached the stage of pilot deliveries of innovative Quantum13 sensors with a resolution of 13 megapixels. All interested smartphone manufacturers, and according to rumors, Sony is among them, can get a new product to test its properties. If positive, InVisage sensors may appear in smartphones in the foreseeable future.

The essence of the development of InVisage is that its sensors do not have a layer of photodiodes, traditional for CMOS sensors. Instead of an array of silicon photodiodes, the incident light is captured in the form of a charge in a thin layer of transparent polymer film interspersed with "quantum dots" made of a special material. It is reported that these are elements of the metal-chalcogenide type from groups II-VI of the periodic table. Thus, it was possible to reduce the thickness of the photosensors from 2-3 microns to 0,5 microns. Reducing the thickness of the photosensitive layer and, consequently, expanding the angles of incidence of light, will also reduce the thickness of the optical system and make smartphone cameras thinner.

In addition, the nonlinear charge of the photosensitive layer based on quantum dots will expand the dynamic range of sensors. Also, a new type of sensor absorbs light eight times faster (gaining charge) than photodiodes in CMOS sensors. The accelerated image capture opens the way to the so-called global shutter, when the image is taken from the entire matrix at once when shooting a video, and not line by line, as it is now. All together promises to significantly improve the mobile shooting of photos and videos.

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Nano Flash-100 flash memory from Toshiba 09.02.2013

Toshiba has introduced a development in the field of flash memory, called Nano Flash-100. This is an embedded flash memory for microcontrollers that is significantly faster than the Nano Flash flash memory used by Toshiba for a relatively long time.

Nano Flash combines the features of NAND and NOR technologies: the high write speed of NAND and the NOR circuit design.

With the Nano Flash-100, random access at 100 MHz is performed without sleep cycles, which is the best in the industry. The new memory inherits ultra-low power consumption from Nano Flash.
Toshiba's first Nano Flash-100 product will be the TMPM440F10XBG microcontroller. The release of other products on the ARM architecture is also planned.

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