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Mobile data rate 1 Tbps

03.03.2015

Researchers at the University of Surrey in the UK have been able to achieve wireless data rates of 1 Tbps. The experiment was conducted in the laboratory of the center for the study of fifth generation mobile communication technologies (5G), created at the educational institution.
The 1 Tbps speed is 65 times faster than the average data download speed of today's 100G mobile networks. Theoretically, this speed will allow you to download XNUMX full-length feature films to your mobile device in three seconds.

Professor Rahim Tafazolli, director of the 5G Innovation Center where the experiment was carried out, claims that they have set a record - no one has been able to transmit data wirelessly at such a speed before. The achieved speed is about a thousand times higher than 1 Gb / s - the value that Samsung managed to achieve in 2013. "The speed we have achieved is comparable to the speed of data transmission via optics, but we did it over the air," the director of the center said.

Tafazolli said that the experiment used a transmitter and receiver developed at the University of Surrey. Data transmission was carried out at a distance of 100 meters. He did not provide further details.

In 2016-2017 The 5G Innovation Center plans to test the technology at the university, over long distances. It will be possible to present the development to the public approximately in 2018, the director of the center assumes. "We want to be the first in the world to demonstrate such speed," he added.

However, serial data speed will not be the most important thing in next-generation networks, Tafazolli believes. Much more important in the development of the new standard will be the stability of the signal and the response time to a request for data transmission. He believes so, based on the fact that the 5G standard will be relevant for at least 20 years. "We don't know what applications we will be using in five, fifteen or 25 years. But we know that their work will largely depend on the speed of network response," he explained.

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Texas Instruments and the Technical University of Denmark have developed a Class-D (Class-D) amplifier with 240W output power and less than I/O distortion.

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The amplifier is built on n-channel horizontal (lateral) DMOS transistors, which are used both in the output stages and in the pre-amp stages. Distortions initially affect the timing and electrical characteristics of the prestages. Reduced distortion is achieved by optimizing the size of the transistors of the preliminary and output stages.

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Each half-bridge uses three pins for VDD ground and output, each of which is connected to the crystal by a stranded wire. Two half-bridges are placed on the chip, each of which provides an output current of up to +18 A and a power of up to 244 W at a load of 4 ohms in bridge mode.

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