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Spin memory STT-MRAM

23.01.2015

Spin memory STT-MRAM is free from such shortcomings of flash memory as relatively low reliability and durability, as well as relatively high power consumed when writing data. It is seen as a replacement for flash memory and DRAM

The Singapore agency A*STAR (Agency for Science, Technology and Research) represented by the DSI (Data Storage Institute) and Micron Technology announced the continuation of the joint development of random access magnetic memory, which uses the effect of spin torque transfer magnetic random access memory, STT-MRAM). The original three-year cooperation agreement, signed in autumn 2011, has been extended for another three years.

A*STAR DSI capabilities and the institute's expertise in STT-MRAM helped Micron set up a research center in Singapore. At the initial stage of cooperation, the institute also shared the experience necessary for the successful manufacture of STT-MRAM chips.

Based on the successful experience of working together, the partners intend to focus on developing a low-power switching mechanism and improving the performance of STT-MRAM in the new phase. The parties hope that the cooperation will bring the new memory technology closer to commercial applications.

Recall that STT-MRAM memory is free from such shortcomings of flash memory as relatively low reliability and durability, as well as relatively high power consumed when writing data. It has such a combination of qualities that it can be considered as a replacement for flash memory and random access memory (DRAM).

Micron and A*STAR are not the only ones doing STT-MRAM development. Two years ago, Toshiba specialists managed to create an STT-MRAM memory element with the smallest power consumption in the world, and in early October of this year, TDK showed prototypes of STT-MRAM memory chips with a density of 8 Mbps. In the spring of last year, IMEC and Globalfoundries announced the expansion of cooperation in the development of STT-MRAM memory.

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