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Electric bus Lancaster eBus

22.10.2014

Chinese automaker BYD Motors has unveiled what it claims is the world's largest battery-electric vehicle. It was the electric bus Lancaster eBus, shown at the exhibition in Houston (Texas, USA), organized by the American Public Transportation Association (APTA).

The car is named after the California city of Lancaster, where it was developed for more than two years. The length of the announced two-section bus exceeds 18 meters, it is designed for 120 passengers.

The bus is equipped with lithium iron phosphate batteries, which have a minimal risk of fire, are fully recyclable and have a long life cycle. According to the developers, the used batteries are able to keep the charge necessary for the movement of a heavy electric car for a whole day. That is, you can charge such batteries only at night, when electricity rates are lower, notes Gizmag.

The maximum time during which the batteries of the new electric bus receive a 100% supply of energy is four hours. It is also claimed that Lancaster eBus batteries, recharged 10 thousand times, retain 70% of the charge. As a result, batteries can last up to 25 years, which is longer than the life of the buses themselves.

The Lancaster eBus electric range at full load is claimed to be 179 miles (288 km).

The bus is capable of supplying power to buildings' power grids and charging other electric vehicles.

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Vertical VTFETs 16.12.2021

IBM and Samsung have presented a new development that provides for vertical placement of transistors in chips. Vertical Transport Field Effect Transistors (VTFET) technology can either significantly improve performance or reduce chip power consumption compared to traditional chips of a comparable size.

In modern processors and chipsets, transistors are applied to a silicon wafer in a horizontal plane. Conversely, when using VTFETs, the transistors are arranged vertically.

This development has two advantages. First, many of the restrictions imposed on current technologies by "Moore's Law" are bypassed. Secondly, the new design leads to lower electrical losses due to a more efficient redirection of the energy flow. According to development companies, this will allow creating chips that are either twice as fast or use 85% less energy than similar semiconductors created using FinFET technology.

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IBM and Samsung are not the only companies trying to overcome existing limitations. In July, Intel announced the creation of a transistor layout option that will allow them to go beyond the nanoscale by 2024 and build chips in accordance with the Intel 20A angstrom-class process using a new type of RibbonFET transistor.

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