4 GB DDR64 RDIMM memory modules from Samsung. Free Technical Library News

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Samsung 4GB DDR64 RDIMMs

08.09.2014

Samsung Electronics has announced the start of mass production of 4GB DDR64 RDIMM modules that use 3D TSV package technology. The new high-performance, high-density modules will play a key role in the proliferation of enterprise servers and cloud applications, as well as further diversification of data center solutions, Samsung told CNews.

The new RDIMMs include 36 DDR4 DRAM chips, each consisting of four 4Gb DDR4 DRAM dies. The low power chips are manufactured using Samsung's state-of-the-art 20nm class process and 3D TSV package technology.

"With the introduction of energy-efficient DDR4 modules assembled using 3D TSV technology, we are taking a big step towards the mainstream DDR4 market, which should expand significantly with the expected introduction of next-generation CPUs in the second half of this year," said Jiho Baik, Vice President , Memory Solutions Marketing Division, Samsung Electronics.

Overall, the company noted that the mass production of 3D TSV modules marks a new milestone in the history of memory technology, following Samsung's first production of 3D Vertical NAND (V-NAND) flash memory last year. While 3D V-NAND technology uses tall vertical cell array structures within a monolithic die, 3D TSV is an innovative stacking technology that allows vertical layers of chips to be interconnected, the company explained.
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"To create a 3D TSV DRAM package, DDR4 dies are ground down to a thickness of only a few tens of microns, after which hundreds of tiny holes are created in the dies. They are vertically interconnected using electrodes that are passed through the holes," said Samsung representatives. The new 64 GB TSV module has twice the performance of the 64 GB module, where the packages use wired mounting, and the power consumption of the modules is approximately halved."

In the future, Samsung says it will be possible to interconnect more than four DDR4 dies using 3D TSV technology, allowing even higher density DRAM modules to be built. This will accelerate the expansion of the premium memory market and the transition from DDR3 to DDR4 memory in the server market.

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Products have the ability to store up to 4 output voltage / current profiles (up to 12 points) in memory and call these profiles with a simple click. Thanks to the built-in Dynamic Preload module, the output voltage decay time is reduced to 45-65 ms, which allows you to simulate fast drops. To increase the output current or increase the output voltage, the products can be connected in parallel and in series. When connected in parallel, up to 6 sources can be combined, and when connected in series, protective diodes for the appropriate reverse voltage must be used. Structurally, the products can be made in a desktop version or for installation in a 2U rack.

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