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Samsung 20nm mobile DRAM chips

12.05.2013

When choosing a modern smartphone, users rarely pay special attention to the RAM subsystem - usually the matter ends up only with information about the amount of "RAM". But this does not mean that the developers of integrated circuits are not engaged in the development and improvement of mobile DRAM. For example, Samsung has just announced the start of mass production of new LPDDR3-type chips manufactured using a 20-nm process and having a capacity of 4 Gbps.

According to the developers, LPDDR3 chips should replace LPDDR2 chips on the market, at least in the sector of "top" smartphones and tablet computers. To do this, newcomers have a number of advantages: smaller size, greater efficiency, higher performance (throughput of 2133 Mbps versus 800 Mbps for LPDDR2), and - very important for the portable electronics market - 20% lower power consumption. Note that by combining four LPDDR3 chips, RAM OEMs will end up with a 2 GB module packaged in a very, very compact package with a thickness of only 0,8 mm.

In the near future, Samsung plans to focus on 20nm RAM integrated circuits, constantly increasing the output of new generation products. This will allow it to successfully compete with competitors in the market for mobile DRAM chips, which, according to the analytical agency Gartner, will only increase volumes from year to year. The forecast for the near future is as follows: by the end of 2013, the RAM market is expected to increase by 13%, to $29,6 billion. Of these, about 35% will fall on the mobile DRAM segment, or about $10 billion.

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